@inproceedings{846ffe0f981841c2a251d1a1d0290dd0,
title = "Investigation of Ni doped Ge-Te materials for high temperature phase change memory applications",
abstract = "Ni-doped Ge-Te (Ni-GT) material was proposed and investigated for phase change random access memory (PCRAM) applications. With Ni addition, the crystallization temperature, data retention ability and crystallization speed were obviously improved. The surface roughness of crystalline Ni-GT films was decreased by Ni incorporation. Moreover, temperature dependent transmission electron microscopy (TEM) was applied to investigate the phase change behavior of Ni-GT films. All the experimental results demonstrated that Ni-GT material has potential for high-speed PCRAM applications in high temperature environment.",
keywords = "Crystallization temperature, Phase change material, Surface roughness, Thermal stability",
author = "Cao, \{Liang Liang\} and Wu, \{Liang Cai\} and Song, \{Zhi Tang\} and Zhu, \{Wen Qing\} and Zheng, \{Yong Hui\} and Yan Cheng and Song, \{San Nian\} and Ma, \{Zhong Yuan\} and Ling Xu",
note = "Publisher Copyright: {\textcopyright} 2016 Trans Tech Publications, Switzerland.; Chinese Materials Congress on Functional and Functionally Structured Materials, CMC 2015 ; Conference date: 10-07-2015 Through 14-07-2015",
year = "2016",
doi = "10.4028/www.scientific.net/MSF.848.460",
language = "英语",
isbn = "9783038357605",
series = "Materials Science Forum",
publisher = "Trans Tech Publications Ltd",
pages = "460--465",
editor = "Yafang Han and Ying Wu and Guangxian Li and Fusheng Pan and Xuefeng Liu and Runhua Fan",
booktitle = "Functional and Functionally Structured Materials",
address = "瑞士",
}