Investigation of LITV signal of Si/Si0.5Ge0.5 super lattices

  • Xiao Fang Zhou
  • , Peng Xiang Zhang
  • , Jian Hui Lin
  • , Xiao Dong Tang*
  • *Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

10 period p-Si/Si0.5Ge0.5superlattices grown on Si (001) substrate by MBE, with 8° and 0° tilted, the laser induced thermoelectric voltages (LITV) were measured under femtosecond laser. The larger induced peak voltages were obtained in films grown on tilting direction, while a smaller induced voltage were measured in films on untilted substrate. The results demonstrated that the Si/Si0.5Ge0.5 superlattices show anisotropic Seebeck components in tilting and untilting direction for films grown on vicinal cut substrates. This is very meaningful for developing the detectors with broad optical response and fast response.

Original languageEnglish
Pages (from-to)245-248
Number of pages4
JournalGuangzi Xuebao/Acta Photonica Sinica
Volume37
Issue numberSUPPL. 2
StatePublished - Dec 2008

Keywords

  • Anisotropic Seebeck components
  • Femtosecond laser
  • LITV
  • p-Si/SiGe superlattices

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