Abstract
10 period p-Si/Si0.5Ge0.5superlattices grown on Si (001) substrate by MBE, with 8° and 0° tilted, the laser induced thermoelectric voltages (LITV) were measured under femtosecond laser. The larger induced peak voltages were obtained in films grown on tilting direction, while a smaller induced voltage were measured in films on untilted substrate. The results demonstrated that the Si/Si0.5Ge0.5 superlattices show anisotropic Seebeck components in tilting and untilting direction for films grown on vicinal cut substrates. This is very meaningful for developing the detectors with broad optical response and fast response.
| Original language | English |
|---|---|
| Pages (from-to) | 245-248 |
| Number of pages | 4 |
| Journal | Guangzi Xuebao/Acta Photonica Sinica |
| Volume | 37 |
| Issue number | SUPPL. 2 |
| State | Published - Dec 2008 |
Keywords
- Anisotropic Seebeck components
- Femtosecond laser
- LITV
- p-Si/SiGe superlattices