Investigation of interface and bulk fatigue scenarios in sol-gel derived Pb(Zr0.5Ti0.5)O3 films by asymmetric field driving

Biao Li; F. Koch; X. J. Meng; J. G. Cheng; J. H. Chu

doi:10.1063/1.1306609

Investigation of interface and bulk fatigue scenarios in sol-gel derived Pb(Zr_0.5Ti_0.5)O₃ films by asymmetric field driving

Biao Li^*
, F. Koch
, X. J. Meng
, J. G. Cheng
, J. H. Chu

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

A method to distinguish the bulk and interface scenarios of fatigue in sol-gel derived Pb(Zr_0.5,Ti_0.5)O₃ (PZT) thin films on Pt and LaNiO₃ (LNO) substrates is proposed based on the asymmetric electric field driving of capacitors. The "hard" and "soft" failures of polarization, which are typical for sputtering and sol-gel deposited PZT, respectively, are realized in sol-gel derived Pt/PZT/Pt capacitors by changing the asymmetricity of driving pulses, indicating that the interface plays an important role in the polarization breakdown. For Pt/PZT/LNO capacitors, it is shown that the bulk pinning of domains appears to be more evident than the interface pinning. A model based on the electromigration and entrapment of charged defects subjected to the asymmetric field is also given, and the plausible approximation of space charge field versus charge density is discussed.

Original language	English
Pages (from-to)	898-900
Number of pages	3
Journal	Applied Physics Letters
Volume	77
Issue number	6
DOIs	https://doi.org/10.1063/1.1306609
State	Published - 7 Aug 2000
Externally published	Yes

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title = "Investigation of interface and bulk fatigue scenarios in sol-gel derived Pb(Zr0.5Ti0.5)O3 films by asymmetric field driving",

abstract = "A method to distinguish the bulk and interface scenarios of fatigue in sol-gel derived Pb(Zr0.5,Ti0.5)O3 (PZT) thin films on Pt and LaNiO3 (LNO) substrates is proposed based on the asymmetric electric field driving of capacitors. The {"}hard{"} and {"}soft{"} failures of polarization, which are typical for sputtering and sol-gel deposited PZT, respectively, are realized in sol-gel derived Pt/PZT/Pt capacitors by changing the asymmetricity of driving pulses, indicating that the interface plays an important role in the polarization breakdown. For Pt/PZT/LNO capacitors, it is shown that the bulk pinning of domains appears to be more evident than the interface pinning. A model based on the electromigration and entrapment of charged defects subjected to the asymmetric field is also given, and the plausible approximation of space charge field versus charge density is discussed.",

author = "Biao Li and F. Koch and Meng, \{X. J.\} and Cheng, \{J. G.\} and Chu, \{J. H.\}",

year = "2000",

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doi = "10.1063/1.1306609",

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T1 - Investigation of interface and bulk fatigue scenarios in sol-gel derived Pb(Zr0.5Ti0.5)O3 films by asymmetric field driving

AU - Li, Biao

AU - Koch, F.

AU - Meng, X. J.

AU - Cheng, J. G.

AU - Chu, J. H.

PY - 2000/8/7

Y1 - 2000/8/7

N2 - A method to distinguish the bulk and interface scenarios of fatigue in sol-gel derived Pb(Zr0.5,Ti0.5)O3 (PZT) thin films on Pt and LaNiO3 (LNO) substrates is proposed based on the asymmetric electric field driving of capacitors. The "hard" and "soft" failures of polarization, which are typical for sputtering and sol-gel deposited PZT, respectively, are realized in sol-gel derived Pt/PZT/Pt capacitors by changing the asymmetricity of driving pulses, indicating that the interface plays an important role in the polarization breakdown. For Pt/PZT/LNO capacitors, it is shown that the bulk pinning of domains appears to be more evident than the interface pinning. A model based on the electromigration and entrapment of charged defects subjected to the asymmetric field is also given, and the plausible approximation of space charge field versus charge density is discussed.

AB - A method to distinguish the bulk and interface scenarios of fatigue in sol-gel derived Pb(Zr0.5,Ti0.5)O3 (PZT) thin films on Pt and LaNiO3 (LNO) substrates is proposed based on the asymmetric electric field driving of capacitors. The "hard" and "soft" failures of polarization, which are typical for sputtering and sol-gel deposited PZT, respectively, are realized in sol-gel derived Pt/PZT/Pt capacitors by changing the asymmetricity of driving pulses, indicating that the interface plays an important role in the polarization breakdown. For Pt/PZT/LNO capacitors, it is shown that the bulk pinning of domains appears to be more evident than the interface pinning. A model based on the electromigration and entrapment of charged defects subjected to the asymmetric field is also given, and the plausible approximation of space charge field versus charge density is discussed.

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U2 - 10.1063/1.1306609

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M3 - 文章

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JO - Applied Physics Letters

JF - Applied Physics Letters

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ER -

Investigation of interface and bulk fatigue scenarios in sol-gel derived Pb(Zr_0.5Ti_0.5)O₃ films by asymmetric field driving

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