Investigation of Ge-Sn-Te alloy for long data retention and high speed phase change memory application

Zhonghua Zhang; Sannian Song; Zhitang Song; Yan Cheng; Feng Rao; Liangcai Wu; Bo Liu; Bomy Chen; Yegang Lu

doi:10.1063/1.4824303

Investigation of Ge-Sn-Te alloy for long data retention and high speed phase change memory application

Zhonghua Zhang
, Sannian Song
, Zhitang Song
, Yan Cheng
, Feng Rao
, Liangcai Wu
, Bo Liu
, Bomy Chen
, Yegang Lu

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

Ge₄₄Sn₁₄Te₄₂ phase change material exhibits a higher crystallization temperature (∼221 °C), a larger crystallization activation energy (∼2.88 eV) and a better data retention ability (∼126 °C for 10 years) in comparison with those of Ge ₂Sb₂Te₅. A reversible switching between set and reset can be realized by an electric pulse as short as 10 ns for Ge ₄₄Sn₁₄Te₄₂ based phase change memory (PCM) cell. In addition, PCM based on Ge₄₄Sn₁₄Te₄₂ shows endurance up to 2.7 × 10³ cycles with a resistance of about two orders of magnitude on/off ratio.

Original language	English
Article number	142112
Journal	Applied Physics Letters
Volume	103
Issue number	14
DOIs	https://doi.org/10.1063/1.4824303
State	Published - 30 Sep 2013
Externally published	Yes

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title = "Investigation of Ge-Sn-Te alloy for long data retention and high speed phase change memory application",

abstract = "Ge44Sn14Te42 phase change material exhibits a higher crystallization temperature (∼221 °C), a larger crystallization activation energy (∼2.88 eV) and a better data retention ability (∼126 °C for 10 years) in comparison with those of Ge 2Sb2Te5. A reversible switching between set and reset can be realized by an electric pulse as short as 10 ns for Ge 44Sn14Te42 based phase change memory (PCM) cell. In addition, PCM based on Ge44Sn14Te42 shows endurance up to 2.7 × 103 cycles with a resistance of about two orders of magnitude on/off ratio.",

author = "Zhonghua Zhang and Sannian Song and Zhitang Song and Yan Cheng and Feng Rao and Liangcai Wu and Bo Liu and Bomy Chen and Yegang Lu",

year = "2013",

month = sep,

day = "30",

doi = "10.1063/1.4824303",

language = "英语",

volume = "103",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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TY - JOUR

T1 - Investigation of Ge-Sn-Te alloy for long data retention and high speed phase change memory application

AU - Zhang, Zhonghua

AU - Song, Sannian

AU - Song, Zhitang

AU - Cheng, Yan

AU - Rao, Feng

AU - Wu, Liangcai

AU - Liu, Bo

AU - Chen, Bomy

AU - Lu, Yegang

PY - 2013/9/30

Y1 - 2013/9/30

N2 - Ge44Sn14Te42 phase change material exhibits a higher crystallization temperature (∼221 °C), a larger crystallization activation energy (∼2.88 eV) and a better data retention ability (∼126 °C for 10 years) in comparison with those of Ge 2Sb2Te5. A reversible switching between set and reset can be realized by an electric pulse as short as 10 ns for Ge 44Sn14Te42 based phase change memory (PCM) cell. In addition, PCM based on Ge44Sn14Te42 shows endurance up to 2.7 × 103 cycles with a resistance of about two orders of magnitude on/off ratio.

AB - Ge44Sn14Te42 phase change material exhibits a higher crystallization temperature (∼221 °C), a larger crystallization activation energy (∼2.88 eV) and a better data retention ability (∼126 °C for 10 years) in comparison with those of Ge 2Sb2Te5. A reversible switching between set and reset can be realized by an electric pulse as short as 10 ns for Ge 44Sn14Te42 based phase change memory (PCM) cell. In addition, PCM based on Ge44Sn14Te42 shows endurance up to 2.7 × 103 cycles with a resistance of about two orders of magnitude on/off ratio.

UR - https://www.scopus.com/pages/publications/84885649943

U2 - 10.1063/1.4824303

DO - 10.1063/1.4824303

M3 - 文章

AN - SCOPUS:84885649943

SN - 0003-6951

VL - 103

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 14

M1 - 142112

ER -

Investigation of Ge-Sn-Te alloy for long data retention and high speed phase change memory application

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