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Investigation of filling factor in In0.53Ga0.47As/In0.52 Al0.48As quantum wells with two occupied subbands

  • Li Yan Shang*
  • , Tie Lin
  • , Wen Zheng Zhou
  • , Shao Ling Guo
  • , Dong Lin Li
  • , Hong Ling Gao
  • , Li Jie Cui
  • , Yi Ping Zeng
  • , Jun Hao Chu
  • *Corresponding author for this work
  • CAS - Shanghai Institute of Technical Physics
  • Guangxi University
  • CAS - Institute of Semiconductors

Research output: Contribution to journal › Article › peer-review

Abstract

The magnetic field dependence of filling factors has been investigated on InP based In0.53Ga0.47As/In0.52 Al0.48As quantum well samples with two occupied subbands by means of magnetotransport measurements at the temperature of 1.5 K in a magnetic field range of 0 to 13 T. Under the condiction that Laundau-level broadening is larger than the spin splitting of each subband, filling factors are even when the splitting energy of two subbands is an integer multiple of the cyclotron energy, i. e. ΔE21 = khwc. If the splitting energy of two subbands is half of an odd interger multiple of the cyclotron erergy, i.e. ΔE21 = (2k + 1) hwc/2, the filling factor is odd.

Original languageEnglish
Pages (from-to)3818-3822
Number of pages5
JournalWuli Xuebao/Acta Physica Sinica
Volume57
Issue number6
StatePublished - 2008

Keywords

  • Filling factor
  • InGaAs/In AlAs quantum well
  • Magnetotransport measurement

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