TY - JOUR
T1 - Investigation of electronic transport mechanisms in Sb 2 Se 3 thin-film solar cells
AU - Tao, Jiahua
AU - Hu, Xiaobo
AU - Xue, Juanjuan
AU - Wang, Youyang
AU - Weng, Guoen
AU - Chen, Shaoqiang
AU - Zhu, Ziqiang
AU - Chu, Junhao
N1 - Publisher Copyright:
© 2019
PY - 2019/8/1
Y1 - 2019/8/1
N2 - Electronic transport mechanisms in Sb 2 Se 3 thin-film solar cells were investigated using temperature-dependent current-voltage (J-V) measurements. Sb 2 Se 3 thin films were deposited via the vapor transporting deposition method using a double-temperature-zone tubular furnace system, and comparative studies were performed for Sb 2 Se 3 films formed on substrates located at three different positions away from the furnace center. The device efficiency varied from 3.83 to 6.24%. First, structural properties obtained by X-ray diffraction, Raman and scanning electron microscopy measurements verified the optimal Sb 2 Se 3 film quality for the cell with the highest efficiency. Then, temperature-dependent saturation current and open-circuit voltage (V oc ) measurements revealed that the dominant carrier recombination occurred in the CdS/Sb 2 Se 3 interface region, which possibly influenced the V oc for all cells: the highest V oc for the optimal Sb 2 Se 3 cell was at least partly due to it having the lowest CdS/Sb 2 Se 3 interface recombination rate. Finally, the reverse bias current relationship revealed that non-ohmic shunt current (space-charge-limited current, SCLC) plays an important role in affecting the performance of solar cells, as lower-efficiency cells had higher non-ohmic shunt current.
AB - Electronic transport mechanisms in Sb 2 Se 3 thin-film solar cells were investigated using temperature-dependent current-voltage (J-V) measurements. Sb 2 Se 3 thin films were deposited via the vapor transporting deposition method using a double-temperature-zone tubular furnace system, and comparative studies were performed for Sb 2 Se 3 films formed on substrates located at three different positions away from the furnace center. The device efficiency varied from 3.83 to 6.24%. First, structural properties obtained by X-ray diffraction, Raman and scanning electron microscopy measurements verified the optimal Sb 2 Se 3 film quality for the cell with the highest efficiency. Then, temperature-dependent saturation current and open-circuit voltage (V oc ) measurements revealed that the dominant carrier recombination occurred in the CdS/Sb 2 Se 3 interface region, which possibly influenced the V oc for all cells: the highest V oc for the optimal Sb 2 Se 3 cell was at least partly due to it having the lowest CdS/Sb 2 Se 3 interface recombination rate. Finally, the reverse bias current relationship revealed that non-ohmic shunt current (space-charge-limited current, SCLC) plays an important role in affecting the performance of solar cells, as lower-efficiency cells had higher non-ohmic shunt current.
KW - Carrier recombination
KW - Electronic transport mechanisms
KW - Interface recombination
KW - Sb Se thin-film solar cell
UR - https://www.scopus.com/pages/publications/85064047832
U2 - 10.1016/j.solmat.2019.04.003
DO - 10.1016/j.solmat.2019.04.003
M3 - 文章
AN - SCOPUS:85064047832
SN - 0927-0248
VL - 197
SP - 1
EP - 6
JO - Solar Energy Materials and Solar Cells
JF - Solar Energy Materials and Solar Cells
ER -
