Investigation of electronic transport mechanisms in Sb                         2                         Se                         3                          thin-film solar cells

Jiahua Tao; Xiaobo Hu; Juanjuan Xue; Youyang Wang; Guoen Weng; Shaoqiang Chen; Ziqiang Zhu; Junhao Chu

doi:10.1016/j.solmat.2019.04.003

Investigation of electronic transport mechanisms in Sb ₂ Se ₃ thin-film solar cells

Jiahua Tao
, Xiaobo Hu
, Juanjuan Xue
, Youyang Wang
, Guoen Weng
, Shaoqiang Chen^*
, Ziqiang Zhu
, Junhao Chu

^*Corresponding author for this work

East China Normal University

Research output: Contribution to journal › Article › peer-review

99 Scopus citations

Abstract

Electronic transport mechanisms in Sb ₂ Se ₃ thin-film solar cells were investigated using temperature-dependent current-voltage (J-V) measurements. Sb ₂ Se ₃ thin films were deposited via the vapor transporting deposition method using a double-temperature-zone tubular furnace system, and comparative studies were performed for Sb ₂ Se ₃ films formed on substrates located at three different positions away from the furnace center. The device efficiency varied from 3.83 to 6.24%. First, structural properties obtained by X-ray diffraction, Raman and scanning electron microscopy measurements verified the optimal Sb ₂ Se ₃ film quality for the cell with the highest efficiency. Then, temperature-dependent saturation current and open-circuit voltage (V _oc ) measurements revealed that the dominant carrier recombination occurred in the CdS/Sb ₂ Se ₃ interface region, which possibly influenced the V _oc for all cells: the highest V _oc for the optimal Sb ₂ Se ₃ cell was at least partly due to it having the lowest CdS/Sb ₂ Se ₃ interface recombination rate. Finally, the reverse bias current relationship revealed that non-ohmic shunt current (space-charge-limited current, SCLC) plays an important role in affecting the performance of solar cells, as lower-efficiency cells had higher non-ohmic shunt current.

Original language	English
Pages (from-to)	1-6
Number of pages	6
Journal	Solar Energy Materials and Solar Cells
Volume	197
DOIs	https://doi.org/10.1016/j.solmat.2019.04.003
State	Published - 1 Aug 2019

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

Carrier recombination
Electronic transport mechanisms
Interface recombination
Sb Se thin-film solar cell

Access to Document

10.1016/j.solmat.2019.04.003

Cite this

Tao, J., Hu, X., Xue, J., Wang, Y., Weng, G., Chen, S., Zhu, Z., & Chu, J. (2019). Investigation of electronic transport mechanisms in Sb ₂ Se ₃ thin-film solar cells Solar Energy Materials and Solar Cells, 197, 1-6. https://doi.org/10.1016/j.solmat.2019.04.003

@article{15427884c09548acb6ca06c1143d8bff,

title = " Investigation of electronic transport mechanisms in Sb 2 Se 3 thin-film solar cells ",

abstract = " Electronic transport mechanisms in Sb 2 Se 3 thin-film solar cells were investigated using temperature-dependent current-voltage (J-V) measurements. Sb 2 Se 3 thin films were deposited via the vapor transporting deposition method using a double-temperature-zone tubular furnace system, and comparative studies were performed for Sb 2 Se 3 films formed on substrates located at three different positions away from the furnace center. The device efficiency varied from 3.83 to 6.24\%. First, structural properties obtained by X-ray diffraction, Raman and scanning electron microscopy measurements verified the optimal Sb 2 Se 3 film quality for the cell with the highest efficiency. Then, temperature-dependent saturation current and open-circuit voltage (V oc ) measurements revealed that the dominant carrier recombination occurred in the CdS/Sb 2 Se 3 interface region, which possibly influenced the V oc for all cells: the highest V oc for the optimal Sb 2 Se 3 cell was at least partly due to it having the lowest CdS/Sb 2 Se 3 interface recombination rate. Finally, the reverse bias current relationship revealed that non-ohmic shunt current (space-charge-limited current, SCLC) plays an important role in affecting the performance of solar cells, as lower-efficiency cells had higher non-ohmic shunt current.",

keywords = "Carrier recombination, Electronic transport mechanisms, Interface recombination, Sb Se thin-film solar cell",

author = "Jiahua Tao and Xiaobo Hu and Juanjuan Xue and Youyang Wang and Guoen Weng and Shaoqiang Chen and Ziqiang Zhu and Junhao Chu",

note = "Publisher Copyright: {\textcopyright} 2019",

year = "2019",

month = aug,

day = "1",

doi = "10.1016/j.solmat.2019.04.003",

language = "英语",

volume = "197",

pages = "1--6",

journal = "Solar Energy Materials and Solar Cells",

issn = "0927-0248",

publisher = "Elsevier B.V.",

}

Tao, J , Hu, X, Xue, J, Wang, Y, Weng, G , Chen, S, Zhu, Z & Chu, J 2019, ' Investigation of electronic transport mechanisms in Sb ₂ Se ₃ thin-film solar cells ', Solar Energy Materials and Solar Cells, vol. 197, pp. 1-6. https://doi.org/10.1016/j.solmat.2019.04.003

Investigation of electronic transport mechanisms in Sb ₂ Se ₃ thin-film solar cells . / Tao, Jiahua ; Hu, Xiaobo; Xue, Juanjuan et al.
In: Solar Energy Materials and Solar Cells, Vol. 197, 01.08.2019, p. 1-6.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Investigation of electronic transport mechanisms in Sb 2 Se 3 thin-film solar cells

AU - Tao, Jiahua

AU - Hu, Xiaobo

AU - Xue, Juanjuan

AU - Wang, Youyang

AU - Weng, Guoen

AU - Chen, Shaoqiang

AU - Zhu, Ziqiang

AU - Chu, Junhao

PY - 2019/8/1

Y1 - 2019/8/1

N2 - Electronic transport mechanisms in Sb 2 Se 3 thin-film solar cells were investigated using temperature-dependent current-voltage (J-V) measurements. Sb 2 Se 3 thin films were deposited via the vapor transporting deposition method using a double-temperature-zone tubular furnace system, and comparative studies were performed for Sb 2 Se 3 films formed on substrates located at three different positions away from the furnace center. The device efficiency varied from 3.83 to 6.24%. First, structural properties obtained by X-ray diffraction, Raman and scanning electron microscopy measurements verified the optimal Sb 2 Se 3 film quality for the cell with the highest efficiency. Then, temperature-dependent saturation current and open-circuit voltage (V oc ) measurements revealed that the dominant carrier recombination occurred in the CdS/Sb 2 Se 3 interface region, which possibly influenced the V oc for all cells: the highest V oc for the optimal Sb 2 Se 3 cell was at least partly due to it having the lowest CdS/Sb 2 Se 3 interface recombination rate. Finally, the reverse bias current relationship revealed that non-ohmic shunt current (space-charge-limited current, SCLC) plays an important role in affecting the performance of solar cells, as lower-efficiency cells had higher non-ohmic shunt current.

AB - Electronic transport mechanisms in Sb 2 Se 3 thin-film solar cells were investigated using temperature-dependent current-voltage (J-V) measurements. Sb 2 Se 3 thin films were deposited via the vapor transporting deposition method using a double-temperature-zone tubular furnace system, and comparative studies were performed for Sb 2 Se 3 films formed on substrates located at three different positions away from the furnace center. The device efficiency varied from 3.83 to 6.24%. First, structural properties obtained by X-ray diffraction, Raman and scanning electron microscopy measurements verified the optimal Sb 2 Se 3 film quality for the cell with the highest efficiency. Then, temperature-dependent saturation current and open-circuit voltage (V oc ) measurements revealed that the dominant carrier recombination occurred in the CdS/Sb 2 Se 3 interface region, which possibly influenced the V oc for all cells: the highest V oc for the optimal Sb 2 Se 3 cell was at least partly due to it having the lowest CdS/Sb 2 Se 3 interface recombination rate. Finally, the reverse bias current relationship revealed that non-ohmic shunt current (space-charge-limited current, SCLC) plays an important role in affecting the performance of solar cells, as lower-efficiency cells had higher non-ohmic shunt current.

KW - Carrier recombination

KW - Electronic transport mechanisms

KW - Interface recombination

KW - Sb Se thin-film solar cell

UR - https://www.scopus.com/pages/publications/85064047832

U2 - 10.1016/j.solmat.2019.04.003

DO - 10.1016/j.solmat.2019.04.003

M3 - 文章

AN - SCOPUS:85064047832

SN - 0927-0248

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SP - 1

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JO - Solar Energy Materials and Solar Cells

JF - Solar Energy Materials and Solar Cells

ER -