Investigation of Deep-level Defects in CuGaSe2 Thin-film Solar Cells by Transient Photo-capacitance Spectroscopy

X. B. Hu; G. E. Weng; S. Q. Chen; K. Akimoto

doi:10.1088/1742-6596/864/1/012077

Investigation of Deep-level Defects in CuGaSe₂ Thin-film Solar Cells by Transient Photo-capacitance Spectroscopy

X. B. Hu
, G. E. Weng
, S. Q. Chen
, K. Akimoto

School of Communication and Electronic Engineering

University of Tsukuba

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

Properties of deep-level defects in CuGaSe₂ thin-film solar cells were investigated using transient photo-capacitance (TPC) spectroscopy. Two Gaussian-shaped deep-level defects centered at around 0.8 eV and 1.54 eV above the valence band were identified. The electronic structure of the two defects was illustrated by a configuration coordinate model to explain the thermal quenching effect in the two defects, which considered a large lattice distortion for the 0.8 eV defect while no distortion for the 1.54 eV defect.

Original language	English
Article number	012077
Journal	Journal of Physics: Conference Series
Volume	864
Issue number	1
DOIs	https://doi.org/10.1088/1742-6596/864/1/012077
State	Published - 15 Aug 2017
Event	33rd International Conference on the Physics of Semiconductors, ICPS 2016 - Beijing, China Duration: 31 Jul 2016 → 5 Aug 2016

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title = "Investigation of Deep-level Defects in CuGaSe2 Thin-film Solar Cells by Transient Photo-capacitance Spectroscopy",

abstract = "Properties of deep-level defects in CuGaSe2 thin-film solar cells were investigated using transient photo-capacitance (TPC) spectroscopy. Two Gaussian-shaped deep-level defects centered at around 0.8 eV and 1.54 eV above the valence band were identified. The electronic structure of the two defects was illustrated by a configuration coordinate model to explain the thermal quenching effect in the two defects, which considered a large lattice distortion for the 0.8 eV defect while no distortion for the 1.54 eV defect.",

author = "Hu, \{X. B.\} and Weng, \{G. E.\} and Chen, \{S. Q.\} and K. Akimoto",

year = "2017",

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TY - JOUR

T1 - Investigation of Deep-level Defects in CuGaSe2 Thin-film Solar Cells by Transient Photo-capacitance Spectroscopy

AU - Hu, X. B.

AU - Weng, G. E.

AU - Chen, S. Q.

AU - Akimoto, K.

PY - 2017/8/15

Y1 - 2017/8/15

N2 - Properties of deep-level defects in CuGaSe2 thin-film solar cells were investigated using transient photo-capacitance (TPC) spectroscopy. Two Gaussian-shaped deep-level defects centered at around 0.8 eV and 1.54 eV above the valence band were identified. The electronic structure of the two defects was illustrated by a configuration coordinate model to explain the thermal quenching effect in the two defects, which considered a large lattice distortion for the 0.8 eV defect while no distortion for the 1.54 eV defect.

AB - Properties of deep-level defects in CuGaSe2 thin-film solar cells were investigated using transient photo-capacitance (TPC) spectroscopy. Two Gaussian-shaped deep-level defects centered at around 0.8 eV and 1.54 eV above the valence band were identified. The electronic structure of the two defects was illustrated by a configuration coordinate model to explain the thermal quenching effect in the two defects, which considered a large lattice distortion for the 0.8 eV defect while no distortion for the 1.54 eV defect.

UR - https://www.scopus.com/pages/publications/85028773400

U2 - 10.1088/1742-6596/864/1/012077

DO - 10.1088/1742-6596/864/1/012077

M3 - 会议文章

AN - SCOPUS:85028773400

SN - 1742-6588

VL - 864

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

IS - 1

M1 - 012077

T2 - 33rd International Conference on the Physics of Semiconductors, ICPS 2016

Y2 - 31 July 2016 through 5 August 2016

ER -

Investigation of Deep-level Defects in CuGaSe₂ Thin-film Solar Cells by Transient Photo-capacitance Spectroscopy

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