Investigation of Cr0.06(Sb4Te)0.94 alloy for high-speed and high-data-retention phase change random access memory applications

Le Li; Sannian Song; Zhonghua Zhang; Zhitang Song; Yan Cheng; Shilong Lv; Liangcai Wu; Bo Liu; Songlin Feng

doi:10.1007/s00339-015-9211-3

Investigation of Cr_0.06(Sb₄Te)_0.94 alloy for high-speed and high-data-retention phase change random access memory applications

Le Li^*
, Sannian Song
, Zhonghua Zhang
, Zhitang Song
, Yan Cheng
, Shilong Lv
, Liangcai Wu
, Bo Liu
, Songlin Feng

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

The effects of Cr doping on the structural and electrical properties of Cr_x(Sb₄Te)_1−x materials have been investigated in order to solve the contradiction between thermal stability and fast crystallization speed of Sb₄Te alloys. Cr_0.06(Sb₄Te)_0.94 alloy is considered to be a potential candidate for phase change random access memory (PCM), as evidenced by a higher crystallization temperature (204 °C), a better data retention ability (137.6 °C for 10 years), a lower melting point (558 °C), a lower energy consumption, and a faster switching speed in comparison with those of Ge₂Sb₂Te₅. A reversible switching between set and reset states can be realized by an electric pulse as short as 5 ns for Cr_0.06(Sb₄Te)_0.94-based PCM cell. In addition, Cr_0.06(Sb₄Te)_0.94 shows good endurance up to 1.1 × 10⁴ cycles with a resistance ratio of about two orders of magnitude.

Original language	English
Pages (from-to)	537-542
Number of pages	6
Journal	Applied Physics A: Materials Science and Processing
Volume	120
Issue number	2
DOIs	https://doi.org/10.1007/s00339-015-9211-3
State	Published - 25 Aug 2015
Externally published	Yes

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title = "Investigation of Cr0.06(Sb4Te)0.94 alloy for high-speed and high-data-retention phase change random access memory applications",

abstract = "The effects of Cr doping on the structural and electrical properties of Crx(Sb4Te)1−x materials have been investigated in order to solve the contradiction between thermal stability and fast crystallization speed of Sb4Te alloys. Cr0.06(Sb4Te)0.94 alloy is considered to be a potential candidate for phase change random access memory (PCM), as evidenced by a higher crystallization temperature (204 °C), a better data retention ability (137.6 °C for 10 years), a lower melting point (558 °C), a lower energy consumption, and a faster switching speed in comparison with those of Ge2Sb2Te5. A reversible switching between set and reset states can be realized by an electric pulse as short as 5 ns for Cr0.06(Sb4Te)0.94-based PCM cell. In addition, Cr0.06(Sb4Te)0.94 shows good endurance up to 1.1 × 104 cycles with a resistance ratio of about two orders of magnitude.",

author = "Le Li and Sannian Song and Zhonghua Zhang and Zhitang Song and Yan Cheng and Shilong Lv and Liangcai Wu and Bo Liu and Songlin Feng",

note = "Publisher Copyright: {\textcopyright} 2015, Springer-Verlag Berlin Heidelberg.",

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doi = "10.1007/s00339-015-9211-3",

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T1 - Investigation of Cr0.06(Sb4Te)0.94 alloy for high-speed and high-data-retention phase change random access memory applications

AU - Li, Le

AU - Song, Sannian

AU - Zhang, Zhonghua

AU - Song, Zhitang

AU - Cheng, Yan

AU - Lv, Shilong

AU - Wu, Liangcai

AU - Liu, Bo

AU - Feng, Songlin

PY - 2015/8/25

Y1 - 2015/8/25

N2 - The effects of Cr doping on the structural and electrical properties of Crx(Sb4Te)1−x materials have been investigated in order to solve the contradiction between thermal stability and fast crystallization speed of Sb4Te alloys. Cr0.06(Sb4Te)0.94 alloy is considered to be a potential candidate for phase change random access memory (PCM), as evidenced by a higher crystallization temperature (204 °C), a better data retention ability (137.6 °C for 10 years), a lower melting point (558 °C), a lower energy consumption, and a faster switching speed in comparison with those of Ge2Sb2Te5. A reversible switching between set and reset states can be realized by an electric pulse as short as 5 ns for Cr0.06(Sb4Te)0.94-based PCM cell. In addition, Cr0.06(Sb4Te)0.94 shows good endurance up to 1.1 × 104 cycles with a resistance ratio of about two orders of magnitude.

AB - The effects of Cr doping on the structural and electrical properties of Crx(Sb4Te)1−x materials have been investigated in order to solve the contradiction between thermal stability and fast crystallization speed of Sb4Te alloys. Cr0.06(Sb4Te)0.94 alloy is considered to be a potential candidate for phase change random access memory (PCM), as evidenced by a higher crystallization temperature (204 °C), a better data retention ability (137.6 °C for 10 years), a lower melting point (558 °C), a lower energy consumption, and a faster switching speed in comparison with those of Ge2Sb2Te5. A reversible switching between set and reset states can be realized by an electric pulse as short as 5 ns for Cr0.06(Sb4Te)0.94-based PCM cell. In addition, Cr0.06(Sb4Te)0.94 shows good endurance up to 1.1 × 104 cycles with a resistance ratio of about two orders of magnitude.

UR - https://www.scopus.com/pages/publications/84937973017

U2 - 10.1007/s00339-015-9211-3

DO - 10.1007/s00339-015-9211-3

M3 - 文章

AN - SCOPUS:84937973017

SN - 0947-8396

VL - 120

SP - 537

EP - 542

JO - Applied Physics A: Materials Science and Processing

JF - Applied Physics A: Materials Science and Processing

IS - 2

ER -

Investigation of Cr_0.06(Sb₄Te)_0.94 alloy for high-speed and high-data-retention phase change random access memory applications

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