Investigation of Al-Sb-Se alloy for long data retention and low power consumption phase change memory application

Zhonghua Zhang; Yifeng Gu; Sannian Song; Zhitang Song; Yan Cheng; Bo Liu; Yueqin Zhu; Dong Zhou; Songlin Feng

doi:10.1063/1.4891731

Investigation of Al-Sb-Se alloy for long data retention and low power consumption phase change memory application

Zhonghua Zhang
, Yifeng Gu
, Sannian Song
, Zhitang Song
, Yan Cheng
, Bo Liu
, Yueqin Zhu
, Dong Zhou
, Songlin Feng

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

Te-free phase-change material Al-Sb-Se is investigated and considered to be a promising candidate of storage medium for phase change memory (PCM) application. Al_0.49Sb_2.19Se exhibits a higher crystallization temperature (∼ 222.7 °C), a larger crystallization activation energy (∼ 4.17 eV), and a better data retention (∼ 146.5 °C for 10 yr) in comparison with those of Ge₂Sb ₂Te₅. The uniformity of material distribution for crystalline film improves the reliability of phase change memory. Al _0.49Sb_2.19Se-based memory cell significantly shows lower power consumption for SET/RESET reversible switching than that of Ge ₂Sb₂Te₅-based one. Furthermore, PCM based on Al_0.49Sb_2.19Se shows endurance up to 3.5 × 10 ³ cycles with stability resistance of about two orders of magnitude on/off ratio.

Original language	English
Article number	074304
Journal	Journal of Applied Physics
Volume	116
Issue number	7
DOIs	https://doi.org/10.1063/1.4891731
State	Published - 21 Aug 2014
Externally published	Yes

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title = "Investigation of Al-Sb-Se alloy for long data retention and low power consumption phase change memory application",

abstract = "Te-free phase-change material Al-Sb-Se is investigated and considered to be a promising candidate of storage medium for phase change memory (PCM) application. Al0.49Sb2.19Se exhibits a higher crystallization temperature (∼ 222.7 °C), a larger crystallization activation energy (∼ 4.17 eV), and a better data retention (∼ 146.5 °C for 10 yr) in comparison with those of Ge2Sb 2Te5. The uniformity of material distribution for crystalline film improves the reliability of phase change memory. Al 0.49Sb2.19Se-based memory cell significantly shows lower power consumption for SET/RESET reversible switching than that of Ge 2Sb2Te5-based one. Furthermore, PCM based on Al0.49Sb2.19Se shows endurance up to 3.5 × 10 3 cycles with stability resistance of about two orders of magnitude on/off ratio.",

author = "Zhonghua Zhang and Yifeng Gu and Sannian Song and Zhitang Song and Yan Cheng and Bo Liu and Yueqin Zhu and Dong Zhou and Songlin Feng",

year = "2014",

month = aug,

day = "21",

doi = "10.1063/1.4891731",

language = "英语",

volume = "116",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

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TY - JOUR

T1 - Investigation of Al-Sb-Se alloy for long data retention and low power consumption phase change memory application

AU - Zhang, Zhonghua

AU - Gu, Yifeng

AU - Song, Sannian

AU - Song, Zhitang

AU - Cheng, Yan

AU - Liu, Bo

AU - Zhu, Yueqin

AU - Zhou, Dong

AU - Feng, Songlin

PY - 2014/8/21

Y1 - 2014/8/21

N2 - Te-free phase-change material Al-Sb-Se is investigated and considered to be a promising candidate of storage medium for phase change memory (PCM) application. Al0.49Sb2.19Se exhibits a higher crystallization temperature (∼ 222.7 °C), a larger crystallization activation energy (∼ 4.17 eV), and a better data retention (∼ 146.5 °C for 10 yr) in comparison with those of Ge2Sb 2Te5. The uniformity of material distribution for crystalline film improves the reliability of phase change memory. Al 0.49Sb2.19Se-based memory cell significantly shows lower power consumption for SET/RESET reversible switching than that of Ge 2Sb2Te5-based one. Furthermore, PCM based on Al0.49Sb2.19Se shows endurance up to 3.5 × 10 3 cycles with stability resistance of about two orders of magnitude on/off ratio.

AB - Te-free phase-change material Al-Sb-Se is investigated and considered to be a promising candidate of storage medium for phase change memory (PCM) application. Al0.49Sb2.19Se exhibits a higher crystallization temperature (∼ 222.7 °C), a larger crystallization activation energy (∼ 4.17 eV), and a better data retention (∼ 146.5 °C for 10 yr) in comparison with those of Ge2Sb 2Te5. The uniformity of material distribution for crystalline film improves the reliability of phase change memory. Al 0.49Sb2.19Se-based memory cell significantly shows lower power consumption for SET/RESET reversible switching than that of Ge 2Sb2Te5-based one. Furthermore, PCM based on Al0.49Sb2.19Se shows endurance up to 3.5 × 10 3 cycles with stability resistance of about two orders of magnitude on/off ratio.

UR - https://www.scopus.com/pages/publications/84906536238

U2 - 10.1063/1.4891731

DO - 10.1063/1.4891731

M3 - 文章

AN - SCOPUS:84906536238

SN - 0021-8979

VL - 116

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 7

M1 - 074304

ER -

Investigation of Al-Sb-Se alloy for long data retention and low power consumption phase change memory application

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