Investigate the growth mechanism of Cu2FeSnS4 thin films by sulfurization of metallic precursor

Xiankuan Meng; Hongmei Deng; Qiao Zhang; Lin Sun; Pingxiong Yang; Junhao Chu

doi:10.1016/j.matlet.2016.10.002

Investigate the growth mechanism of Cu₂FeSnS₄ thin films by sulfurization of metallic precursor

Xiankuan Meng, Hongmei Deng, Qiao Zhang, Lin Sun, Pingxiong Yang^*, Junhao Chu

^*Corresponding author for this work

School of Physics and Electronic Science

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

Cu₂FeSnS₄ (CFTS) thin films have been prepared on glass substrates by a process of sputtering metallic precursor with post-sulfurization. By means of various holding times, the growth mechanism of CFTS has been determined by X-ray diffraction and Raman patterns. Three steps have been involved, the binary-phases CuS_x, FeS_x and SnS_x are synthesized in the preliminary stage, and afterwards, CuS_x reacts with FeS_x to generate ternary-compound CuFeS₂. At last, the target product CFTS is obtained with the increasing holding time of sulfurization. All the thin films have smooth and closely packed surface, and longer holding time is in favor of the grain growth. The thickness of these thin films is around 1 µm.

Original language	English
Pages (from-to)	138-141
Number of pages	4
Journal	Materials Letters
Volume	186
DOIs	https://doi.org/10.1016/j.matlet.2016.10.002
State	Published - 1 Jan 2017

Keywords

CuFeSnS
Sputtering
Sulfurization
Thin films

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10.1016/j.matlet.2016.10.002

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title = "Investigate the growth mechanism of Cu2FeSnS4 thin films by sulfurization of metallic precursor",

abstract = "Cu2FeSnS4 (CFTS) thin films have been prepared on glass substrates by a process of sputtering metallic precursor with post-sulfurization. By means of various holding times, the growth mechanism of CFTS has been determined by X-ray diffraction and Raman patterns. Three steps have been involved, the binary-phases CuSx, FeSx and SnSx are synthesized in the preliminary stage, and afterwards, CuSx reacts with FeSx to generate ternary-compound CuFeS2. At last, the target product CFTS is obtained with the increasing holding time of sulfurization. All the thin films have smooth and closely packed surface, and longer holding time is in favor of the grain growth. The thickness of these thin films is around 1 µm.",

keywords = "CuFeSnS, Sputtering, Sulfurization, Thin films",

author = "Xiankuan Meng and Hongmei Deng and Qiao Zhang and Lin Sun and Pingxiong Yang and Junhao Chu",

note = "Publisher Copyright: {\textcopyright} 2016 Elsevier B.V.",

year = "2017",

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day = "1",

doi = "10.1016/j.matlet.2016.10.002",

language = "英语",

volume = "186",

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TY - JOUR

T1 - Investigate the growth mechanism of Cu2FeSnS4 thin films by sulfurization of metallic precursor

AU - Meng, Xiankuan

AU - Deng, Hongmei

AU - Zhang, Qiao

AU - Sun, Lin

AU - Yang, Pingxiong

AU - Chu, Junhao

PY - 2017/1/1

Y1 - 2017/1/1

N2 - Cu2FeSnS4 (CFTS) thin films have been prepared on glass substrates by a process of sputtering metallic precursor with post-sulfurization. By means of various holding times, the growth mechanism of CFTS has been determined by X-ray diffraction and Raman patterns. Three steps have been involved, the binary-phases CuSx, FeSx and SnSx are synthesized in the preliminary stage, and afterwards, CuSx reacts with FeSx to generate ternary-compound CuFeS2. At last, the target product CFTS is obtained with the increasing holding time of sulfurization. All the thin films have smooth and closely packed surface, and longer holding time is in favor of the grain growth. The thickness of these thin films is around 1 µm.

AB - Cu2FeSnS4 (CFTS) thin films have been prepared on glass substrates by a process of sputtering metallic precursor with post-sulfurization. By means of various holding times, the growth mechanism of CFTS has been determined by X-ray diffraction and Raman patterns. Three steps have been involved, the binary-phases CuSx, FeSx and SnSx are synthesized in the preliminary stage, and afterwards, CuSx reacts with FeSx to generate ternary-compound CuFeS2. At last, the target product CFTS is obtained with the increasing holding time of sulfurization. All the thin films have smooth and closely packed surface, and longer holding time is in favor of the grain growth. The thickness of these thin films is around 1 µm.

KW - CuFeSnS

KW - Sputtering

KW - Sulfurization

KW - Thin films

UR - https://www.scopus.com/pages/publications/84990068756

U2 - 10.1016/j.matlet.2016.10.002

DO - 10.1016/j.matlet.2016.10.002

M3 - 文章

AN - SCOPUS:84990068756

SN - 0167-577X

VL - 186

SP - 138

EP - 141

JO - Materials Letters

JF - Materials Letters

ER -

Investigate the growth mechanism of Cu₂FeSnS₄ thin films by sulfurization of metallic precursor

Abstract

Keywords

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