@inproceedings{12a46705d32244f5b1715a4495a96486,
title = "Intra-metal leakage reliability characteristics for line/via in copper/low-k interconnect structures",
abstract = "For the Cu/low-k interconnect process, leakage reliability is an essential item in conjunction with electromigration. We described for the first time Cu intra level leakage deterioration through vias in structures comprising a combination of line and via. In this paper, we additionally present leakage and breakdown characteristics of low-k dielectrics in a dual damascene Cu process with via-incorporated interconnect structure scaled to 0.13μm DR. We verify the weak point through BTS (bias temperature stress) assessment in specific structures comprising a combination of line and via. Also, we evaluated the effectiveness of the barrier metal by making a comparison between TaN and TaN/Ta. Lastly, we demonstrate that the result could vary according to the IMD (Inter-metal dielectrics) deposition methodology and integration scheme. We suggest several key processes that can affect leakage reliability degradation and also proper stress condition for meaningful result.",
author = "Kim, \{Jeung Woo\} and Lee, \{Nam Hyung\} and Kim, \{Hyung Woo\} and Kim, \{Hyun Soo\} and Rim, \{Chae Bog\}",
note = "Publisher Copyright: {\textcopyright} 2002 IEEE.; IEEE International Integrated Reliability Workshop Final Report, IRW 2002 ; Conference date: 21-10-2002 Through 24-10-2002",
year = "2002",
doi = "10.1109/IRWS.2002.1194229",
language = "英语",
series = "IEEE International Integrated Reliability Workshop Final Report",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "36--40",
booktitle = "2002 IEEE International Integrated Reliability Workshop Final Report, IRW 2002",
address = "美国",
}