Interface-Roughness Effect on Polarization Switching and Reliability Performance of Doped-HfO2Capacitors

Yueyuan Zhang; Yue Peng; Fenning Liu; Kaixuan Li; Ni Zhong; Yan Liu; Yue Hao; Genquan Han

doi:10.1109/TED.2023.3279064

Interface-Roughness Effect on Polarization Switching and Reliability Performance of Doped-HfO₂Capacitors

Yueyuan Zhang, Yue Peng^*, Fenning Liu, Kaixuan Li, Ni Zhong, Yan Liu^*, Yue Hao, Genquan Han

^*Corresponding author for this work

School of Physics and Electronic Science

Xidian University

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

In this article, the influence of interface roughness on the ferroelectric (FE) performance of Hf0.5Zr0.5O2 (HZO) films was experimentally investigated. The HZO capacitor with a rough interface structure shows a higher remnant polarization ( P_r) than that with a flat interface structure. However, although the device with the rough interface can achieve an improved P_r value, it generates a higher electric field within the HZO film and causes more obvious charge injection at the TaON/HZO interface, leading to the increase of interface traps ( D_ it) and leakage current ( J_ leakage) as well as the degradation of endurance. The study is helpful for understanding and optimizing the growth technics of HfO2-based FE memory for advanced node technology.

Original language	English
Pages (from-to)	3788-3793
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	70
Issue number	7
DOIs	https://doi.org/10.1109/TED.2023.3279064
State	Published - 1 Jul 2023

Keywords

Charge injection
Hf .â Zrâ .â Oâ(HZO)
endurance
ferroelectric (FE)
interface-roughness

Access to Document

10.1109/TED.2023.3279064

Cite this

@article{62e362023edc452d9fa6a812571c25d7,

title = "Interface-Roughness Effect on Polarization Switching and Reliability Performance of Doped-HfO2Capacitors",

abstract = "In this article, the influence of interface roughness on the ferroelectric (FE) performance of Hf0.5Zr0.5O2 (HZO) films was experimentally investigated. The HZO capacitor with a rough interface structure shows a higher remnant polarization ( P\_r) than that with a flat interface structure. However, although the device with the rough interface can achieve an improved P\_r value, it generates a higher electric field within the HZO film and causes more obvious charge injection at the TaON/HZO interface, leading to the increase of interface traps ( D\_ it) and leakage current ( J\_ leakage) as well as the degradation of endurance. The study is helpful for understanding and optimizing the growth technics of HfO2-based FE memory for advanced node technology.",

keywords = "Charge injection, Hf .{\^a} Zr{\^a} .{\^a} O{\^a}(HZO), endurance, ferroelectric (FE), interface-roughness",

author = "Yueyuan Zhang and Yue Peng and Fenning Liu and Kaixuan Li and Ni Zhong and Yan Liu and Yue Hao and Genquan Han",

note = "Publisher Copyright: {\textcopyright} 1963-2012 IEEE.",

year = "2023",

month = jul,

day = "1",

doi = "10.1109/TED.2023.3279064",

language = "英语",

volume = "70",

pages = "3788--3793",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "7",

}

TY - JOUR

T1 - Interface-Roughness Effect on Polarization Switching and Reliability Performance of Doped-HfO2Capacitors

AU - Zhang, Yueyuan

AU - Peng, Yue

AU - Liu, Fenning

AU - Li, Kaixuan

AU - Zhong, Ni

AU - Liu, Yan

AU - Hao, Yue

AU - Han, Genquan

PY - 2023/7/1

Y1 - 2023/7/1

N2 - In this article, the influence of interface roughness on the ferroelectric (FE) performance of Hf0.5Zr0.5O2 (HZO) films was experimentally investigated. The HZO capacitor with a rough interface structure shows a higher remnant polarization ( P_r) than that with a flat interface structure. However, although the device with the rough interface can achieve an improved P_r value, it generates a higher electric field within the HZO film and causes more obvious charge injection at the TaON/HZO interface, leading to the increase of interface traps ( D_ it) and leakage current ( J_ leakage) as well as the degradation of endurance. The study is helpful for understanding and optimizing the growth technics of HfO2-based FE memory for advanced node technology.

AB - In this article, the influence of interface roughness on the ferroelectric (FE) performance of Hf0.5Zr0.5O2 (HZO) films was experimentally investigated. The HZO capacitor with a rough interface structure shows a higher remnant polarization ( P_r) than that with a flat interface structure. However, although the device with the rough interface can achieve an improved P_r value, it generates a higher electric field within the HZO film and causes more obvious charge injection at the TaON/HZO interface, leading to the increase of interface traps ( D_ it) and leakage current ( J_ leakage) as well as the degradation of endurance. The study is helpful for understanding and optimizing the growth technics of HfO2-based FE memory for advanced node technology.

KW - Charge injection

KW - Hf .â Zrâ .â Oâ(HZO)

KW - endurance

KW - ferroelectric (FE)

KW - interface-roughness

UR - https://www.scopus.com/pages/publications/85161480266

U2 - 10.1109/TED.2023.3279064

DO - 10.1109/TED.2023.3279064

M3 - 文章

AN - SCOPUS:85161480266

SN - 0018-9383

VL - 70

SP - 3788

EP - 3793

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 7

ER -

Interface-Roughness Effect on Polarization Switching and Reliability Performance of Doped-HfO₂Capacitors

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this