Interface optimization using diindenoperylene for C60 thin film transistors with high electron mobility and stability

Jin Peng Yang; Qi Jun Sun; Keiichirou Yonezawa; Alexander Hinderhofer; Alexander Gerlach; Katharina Broch; Fabio Bussolotti; Xu Gao; Yanqing Li; Jianxin Tang; Frank Schreiber; Nobuo Ueno; Sui Dong Wang; Satoshi Kera

doi:10.1016/j.orgel.2014.07.010

Interface optimization using diindenoperylene for C₆₀ thin film transistors with high electron mobility and stability

Jin Peng Yang
, Qi Jun Sun
, Keiichirou Yonezawa
, Alexander Hinderhofer
, Alexander Gerlach
, Katharina Broch
, Fabio Bussolotti
, Xu Gao
, Yanqing Li
, Jianxin Tang
, Frank Schreiber
, Nobuo Ueno
, Sui Dong Wang^*
, Satoshi Kera

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

22 Scopus citations

Abstract

C₆₀-based organic thin film transistors (OTFTs) with high electron mobility and high operational stability are achieved with (1 1 1) oriented C₆₀ films grown by using template effects of diindenoperylene (DIP) under layer on the SiO₂ gate insulator. The electron mobility of the C₆₀ transistor is significantly increased from 0.21 cm² V^-1 s^-1 to 2.92 cm² V^-1 s^-1 by inserting the template-DIP layer. Moreover much higher operational stability is also observed for the DIP-template C ₆₀ OTFTs. A grazing incidence X-ray diffraction and ultrahigh-sensitivity photoelectron spectroscopy measurements indicate that the improved electron mobility and stability arise from the decreased density of trap states in the C₆₀ film due to increased (1 1 1) orientation of C₆₀-grains and their crystallinity on the DIP template.

Original language	English
Pages (from-to)	2749-2755
Number of pages	7
Journal	Organic Electronics
Volume	15
Issue number	11
DOIs	https://doi.org/10.1016/j.orgel.2014.07.010
State	Published - Nov 2014
Externally published	Yes

Keywords

Electron mobility
Grazing incidence X-ray diffraction
Highly sensitive ultraviolet photoelectron spectroscopy
Organic thin film transistor

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10.1016/j.orgel.2014.07.010

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Yang, J. P., Sun, Q. J., Yonezawa, K., Hinderhofer, A., Gerlach, A., Broch, K., Bussolotti, F., Gao, X., Li, Y., Tang, J., Schreiber, F., Ueno, N., Wang, S. D., & Kera, S. (2014). Interface optimization using diindenoperylene for C₆₀ thin film transistors with high electron mobility and stability. Organic Electronics, 15(11), 2749-2755. https://doi.org/10.1016/j.orgel.2014.07.010

@article{f719f9c06bef490cb90a43b469e49188,

title = "Interface optimization using diindenoperylene for C60 thin film transistors with high electron mobility and stability",

abstract = "C60-based organic thin film transistors (OTFTs) with high electron mobility and high operational stability are achieved with (1 1 1) oriented C60 films grown by using template effects of diindenoperylene (DIP) under layer on the SiO2 gate insulator. The electron mobility of the C60 transistor is significantly increased from 0.21 cm2 V-1 s-1 to 2.92 cm2 V-1 s-1 by inserting the template-DIP layer. Moreover much higher operational stability is also observed for the DIP-template C 60 OTFTs. A grazing incidence X-ray diffraction and ultrahigh-sensitivity photoelectron spectroscopy measurements indicate that the improved electron mobility and stability arise from the decreased density of trap states in the C60 film due to increased (1 1 1) orientation of C60-grains and their crystallinity on the DIP template.",

keywords = "Electron mobility, Grazing incidence X-ray diffraction, Highly sensitive ultraviolet photoelectron spectroscopy, Organic thin film transistor",

author = "Yang, \{Jin Peng\} and Sun, \{Qi Jun\} and Keiichirou Yonezawa and Alexander Hinderhofer and Alexander Gerlach and Katharina Broch and Fabio Bussolotti and Xu Gao and Yanqing Li and Jianxin Tang and Frank Schreiber and Nobuo Ueno and Wang, \{Sui Dong\} and Satoshi Kera",

year = "2014",

month = nov,

doi = "10.1016/j.orgel.2014.07.010",

language = "英语",

volume = "15",

pages = "2749--2755",

journal = "Organic Electronics",

issn = "1566-1199",

publisher = "Elsevier B.V.",

number = "11",

}

Yang, JP, Sun, QJ, Yonezawa, K, Hinderhofer, A, Gerlach, A, Broch, K, Bussolotti, F, Gao, X, Li, Y, Tang, J, Schreiber, F, Ueno, N, Wang, SD & Kera, S 2014, 'Interface optimization using diindenoperylene for C₆₀ thin film transistors with high electron mobility and stability', Organic Electronics, vol. 15, no. 11, pp. 2749-2755. https://doi.org/10.1016/j.orgel.2014.07.010

TY - JOUR

T1 - Interface optimization using diindenoperylene for C60 thin film transistors with high electron mobility and stability

AU - Yang, Jin Peng

AU - Sun, Qi Jun

AU - Yonezawa, Keiichirou

AU - Hinderhofer, Alexander

AU - Gerlach, Alexander

AU - Broch, Katharina

AU - Bussolotti, Fabio

AU - Gao, Xu

AU - Li, Yanqing

AU - Tang, Jianxin

AU - Schreiber, Frank

AU - Ueno, Nobuo

AU - Wang, Sui Dong

AU - Kera, Satoshi

PY - 2014/11

Y1 - 2014/11

N2 - C60-based organic thin film transistors (OTFTs) with high electron mobility and high operational stability are achieved with (1 1 1) oriented C60 films grown by using template effects of diindenoperylene (DIP) under layer on the SiO2 gate insulator. The electron mobility of the C60 transistor is significantly increased from 0.21 cm2 V-1 s-1 to 2.92 cm2 V-1 s-1 by inserting the template-DIP layer. Moreover much higher operational stability is also observed for the DIP-template C 60 OTFTs. A grazing incidence X-ray diffraction and ultrahigh-sensitivity photoelectron spectroscopy measurements indicate that the improved electron mobility and stability arise from the decreased density of trap states in the C60 film due to increased (1 1 1) orientation of C60-grains and their crystallinity on the DIP template.

AB - C60-based organic thin film transistors (OTFTs) with high electron mobility and high operational stability are achieved with (1 1 1) oriented C60 films grown by using template effects of diindenoperylene (DIP) under layer on the SiO2 gate insulator. The electron mobility of the C60 transistor is significantly increased from 0.21 cm2 V-1 s-1 to 2.92 cm2 V-1 s-1 by inserting the template-DIP layer. Moreover much higher operational stability is also observed for the DIP-template C 60 OTFTs. A grazing incidence X-ray diffraction and ultrahigh-sensitivity photoelectron spectroscopy measurements indicate that the improved electron mobility and stability arise from the decreased density of trap states in the C60 film due to increased (1 1 1) orientation of C60-grains and their crystallinity on the DIP template.

KW - Electron mobility

KW - Grazing incidence X-ray diffraction

KW - Highly sensitive ultraviolet photoelectron spectroscopy

KW - Organic thin film transistor

UR - https://www.scopus.com/pages/publications/84906671764

U2 - 10.1016/j.orgel.2014.07.010

DO - 10.1016/j.orgel.2014.07.010

M3 - 文章

AN - SCOPUS:84906671764

SN - 1566-1199

VL - 15

SP - 2749

EP - 2755

JO - Organic Electronics

JF - Organic Electronics

IS - 11

ER -

Interface optimization using diindenoperylene for C₆₀ thin film transistors with high electron mobility and stability

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Keywords

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