Interface electrical characteristics of passivation films on HgCdTe

X. C. Zhang; G. Z. Zheng; S. L. Guo; Y. S. Gui; J. H. Chu

doi:10.1117/12.300664

Interface electrical characteristics of passivation films on HgCdTe

X. C. Zhang
, G. Z. Zheng
, S. L. Guo
, Y. S. Gui
, J. H. Chu

CAS - Shanghai Institute of Technical Physics

Research output: Contribution to journal › Conference article › peer-review

2 Scopus citations

Abstract

A new passivation film: evaporated CdTe/ZnS combination film was grown on HgCdTe and the interface was characterized by Capacitance-Voltage(CV) characteristics of Metal-Insulator-Semiconductor(MIS) test structures. Under proper processing conditions, the interface electrical parameters are: density of fixed charge ̃-4.0×10¹⁰cm^-2, density of slow state ̃5.1×10¹⁰cm^-2, density of fast interface state ̃2.7×10¹¹cm^-2eV^-1, and the time stability is good. These results show CdTe/ZnS double layer film is suitable for passivation of HgCdTe infrared detectors. We have also investigated single layer ZnS and anodic oxide/CdTe/ZnS triple layer film and found that the time stability of ZnS isn't good, and there exists too high density of fixed positive charge at the triple layer film/HgCdTe interface.

Original language	English
Pages (from-to)	183-185
Number of pages	3
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	3175
DOIs	https://doi.org/10.1117/12.300664
State	Published - 1998
Externally published	Yes
Event	3rd International Conference on Thin Film Physics and Applications - Shanghai, China Duration: 15 Apr 1997 → 15 Apr 1997

Keywords

HgCdTe
Interface electrical characteristics
Passivation

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10.1117/12.300664

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@article{1a92a73664bc40f898ae3178b04bf464,

title = "Interface electrical characteristics of passivation films on HgCdTe",

abstract = "A new passivation film: evaporated CdTe/ZnS combination film was grown on HgCdTe and the interface was characterized by Capacitance-Voltage(CV) characteristics of Metal-Insulator-Semiconductor(MIS) test structures. Under proper processing conditions, the interface electrical parameters are: density of fixed charge{\~ }-4.0×1010cm-2, density of slow state{\~ }5.1×1010cm-2, density of fast interface state{\~ }2.7×1011cm-2eV-1, and the time stability is good. These results show CdTe/ZnS double layer film is suitable for passivation of HgCdTe infrared detectors. We have also investigated single layer ZnS and anodic oxide/CdTe/ZnS triple layer film and found that the time stability of ZnS isn't good, and there exists too high density of fixed positive charge at the triple layer film/HgCdTe interface.",

keywords = "HgCdTe, Interface electrical characteristics, Passivation",

author = "Zhang, \{X. C.\} and Zheng, \{G. Z.\} and Guo, \{S. L.\} and Gui, \{Y. S.\} and Chu, \{J. H.\}",

year = "1998",

doi = "10.1117/12.300664",

language = "英语",

volume = "3175",

pages = "183--185",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "SPIE",

note = "3rd International Conference on Thin Film Physics and Applications ; Conference date: 15-04-1997 Through 15-04-1997",

}

TY - JOUR

T1 - Interface electrical characteristics of passivation films on HgCdTe

AU - Zhang, X. C.

AU - Zheng, G. Z.

AU - Guo, S. L.

AU - Gui, Y. S.

AU - Chu, J. H.

PY - 1998

Y1 - 1998

N2 - A new passivation film: evaporated CdTe/ZnS combination film was grown on HgCdTe and the interface was characterized by Capacitance-Voltage(CV) characteristics of Metal-Insulator-Semiconductor(MIS) test structures. Under proper processing conditions, the interface electrical parameters are: density of fixed charge ̃-4.0×1010cm-2, density of slow state ̃5.1×1010cm-2, density of fast interface state ̃2.7×1011cm-2eV-1, and the time stability is good. These results show CdTe/ZnS double layer film is suitable for passivation of HgCdTe infrared detectors. We have also investigated single layer ZnS and anodic oxide/CdTe/ZnS triple layer film and found that the time stability of ZnS isn't good, and there exists too high density of fixed positive charge at the triple layer film/HgCdTe interface.

AB - A new passivation film: evaporated CdTe/ZnS combination film was grown on HgCdTe and the interface was characterized by Capacitance-Voltage(CV) characteristics of Metal-Insulator-Semiconductor(MIS) test structures. Under proper processing conditions, the interface electrical parameters are: density of fixed charge ̃-4.0×1010cm-2, density of slow state ̃5.1×1010cm-2, density of fast interface state ̃2.7×1011cm-2eV-1, and the time stability is good. These results show CdTe/ZnS double layer film is suitable for passivation of HgCdTe infrared detectors. We have also investigated single layer ZnS and anodic oxide/CdTe/ZnS triple layer film and found that the time stability of ZnS isn't good, and there exists too high density of fixed positive charge at the triple layer film/HgCdTe interface.

KW - HgCdTe

KW - Interface electrical characteristics

KW - Passivation

UR - https://www.scopus.com/pages/publications/57649133271

U2 - 10.1117/12.300664

DO - 10.1117/12.300664

M3 - 会议文章

AN - SCOPUS:57649133271

SN - 0277-786X

VL - 3175

SP - 183

EP - 185

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - 3rd International Conference on Thin Film Physics and Applications

Y2 - 15 April 1997 through 15 April 1997

ER -

Interface electrical characteristics of passivation films on HgCdTe

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Keywords

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