Intense blue-light emission from carbon-plasma-implanted porous silicon

Weili Liu; Miao Zhang; Chenglu Lin; Zhaoming Zeng; Lianwei Wang; Paul K. Chu

doi:10.1063/1.1337622

Intense blue-light emission from carbon-plasma-implanted porous silicon

Weili Liu
, Miao Zhang
, Chenglu Lin
, Zhaoming Zeng
, Lianwei Wang
, Paul K. Chu^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

38 Scopus citations

Abstract

We have investigated the room-temperature photoluminescence (PL) characteristics of porous-silicon plasma implanted with carbon. Before implantation, the porous silicon made by anodizing emits intense orange light. After carbon-plasma-immersion ion implantation, the orange light disappears and blue light appears. Furthermore, intense blue light is obtained after annealing at 400°C for 30 min. Analytical results show that the quenching of orange light and appearance of blue light are due to the reduction of the size of nanocrystallites caused by implantation. The effects of different annealing temperature on the light-emission properties of the implanted porous silicon are also studied. The intensity decreases with increased temperature from 600 to 1000°C, but the PL intensity increases drastically again after annealing at 1250°C due to the formation of a substance.

Original language	English
Pages (from-to)	37-39
Number of pages	3
Journal	Applied Physics Letters
Volume	78
Issue number	1
DOIs	https://doi.org/10.1063/1.1337622
State	Published - 1 Jan 2001
Externally published	Yes

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title = "Intense blue-light emission from carbon-plasma-implanted porous silicon",

abstract = "We have investigated the room-temperature photoluminescence (PL) characteristics of porous-silicon plasma implanted with carbon. Before implantation, the porous silicon made by anodizing emits intense orange light. After carbon-plasma-immersion ion implantation, the orange light disappears and blue light appears. Furthermore, intense blue light is obtained after annealing at 400°C for 30 min. Analytical results show that the quenching of orange light and appearance of blue light are due to the reduction of the size of nanocrystallites caused by implantation. The effects of different annealing temperature on the light-emission properties of the implanted porous silicon are also studied. The intensity decreases with increased temperature from 600 to 1000°C, but the PL intensity increases drastically again after annealing at 1250°C due to the formation of a substance.",

author = "Weili Liu and Miao Zhang and Chenglu Lin and Zhaoming Zeng and Lianwei Wang and Chu, \{Paul K.\}",

year = "2001",

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doi = "10.1063/1.1337622",

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publisher = "American Institute of Physics",

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T1 - Intense blue-light emission from carbon-plasma-implanted porous silicon

AU - Liu, Weili

AU - Zhang, Miao

AU - Lin, Chenglu

AU - Zeng, Zhaoming

AU - Wang, Lianwei

AU - Chu, Paul K.

PY - 2001/1/1

Y1 - 2001/1/1

N2 - We have investigated the room-temperature photoluminescence (PL) characteristics of porous-silicon plasma implanted with carbon. Before implantation, the porous silicon made by anodizing emits intense orange light. After carbon-plasma-immersion ion implantation, the orange light disappears and blue light appears. Furthermore, intense blue light is obtained after annealing at 400°C for 30 min. Analytical results show that the quenching of orange light and appearance of blue light are due to the reduction of the size of nanocrystallites caused by implantation. The effects of different annealing temperature on the light-emission properties of the implanted porous silicon are also studied. The intensity decreases with increased temperature from 600 to 1000°C, but the PL intensity increases drastically again after annealing at 1250°C due to the formation of a substance.

AB - We have investigated the room-temperature photoluminescence (PL) characteristics of porous-silicon plasma implanted with carbon. Before implantation, the porous silicon made by anodizing emits intense orange light. After carbon-plasma-immersion ion implantation, the orange light disappears and blue light appears. Furthermore, intense blue light is obtained after annealing at 400°C for 30 min. Analytical results show that the quenching of orange light and appearance of blue light are due to the reduction of the size of nanocrystallites caused by implantation. The effects of different annealing temperature on the light-emission properties of the implanted porous silicon are also studied. The intensity decreases with increased temperature from 600 to 1000°C, but the PL intensity increases drastically again after annealing at 1250°C due to the formation of a substance.

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U2 - 10.1063/1.1337622

DO - 10.1063/1.1337622

M3 - 文章

AN - SCOPUS:0012015157

SN - 0003-6951

VL - 78

SP - 37

EP - 39

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 1

ER -

Intense blue-light emission from carbon-plasma-implanted porous silicon

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