InGaN/GaN ultraviolet LED with a graphene/AZO transparent current spreading layer

Li Lin; Yiyu Ou; Xiaolong Zhu; Eugen Stamate; Kaiyu Wu; Meng Liang; Zhiqiang Liu; Xiaoyan Yi; Berit Herstrøm; Anja Boisen; Flemming Jensen; Haiyan Ou

doi:10.1364/OME.8.001818

InGaN/GaN ultraviolet LED with a graphene/AZO transparent current spreading layer

Li Lin
, Yiyu Ou
, Xiaolong Zhu
, Eugen Stamate
, Kaiyu Wu
, Meng Liang
, Zhiqiang Liu
, Xiaoyan Yi
, Berit Herstrøm
, Anja Boisen
, Flemming Jensen
, Haiyan Ou^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

We report an approach of using an interlayer of single layer graphene (SLG) for electroluminescence (EL) enhancement of an InGaN/GaN-based near-ultraviolet (NUV) light-emitting diode (LED) with an aluminum-doped zinc oxide (AZO)-based current spreading layer (CSL). AZO-based CSLs with and without a SLG interlayer were fabricated on the NUV LED epi-wafers. The current-voltage (I-V) characteristic and the EL intensity were measured and compared. We find that the LED without the SLG interlayer can possess a 40% larger series resistance. Furthermore, a 95% EL enhancement was achieved by the employment of the SLG interlayer.

Original language	English
Pages (from-to)	1818-1826
Number of pages	9
Journal	Optical Materials Express
Volume	8
Issue number	7
DOIs	https://doi.org/10.1364/OME.8.001818
State	Published - 1 Jul 2018
Externally published	Yes

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10.1364/OME.8.001818

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@article{232da2b59ab9487e902cf8811cdad1ad,

title = "InGaN/GaN ultraviolet LED with a graphene/AZO transparent current spreading layer",

abstract = "We report an approach of using an interlayer of single layer graphene (SLG) for electroluminescence (EL) enhancement of an InGaN/GaN-based near-ultraviolet (NUV) light-emitting diode (LED) with an aluminum-doped zinc oxide (AZO)-based current spreading layer (CSL). AZO-based CSLs with and without a SLG interlayer were fabricated on the NUV LED epi-wafers. The current-voltage (I-V) characteristic and the EL intensity were measured and compared. We find that the LED without the SLG interlayer can possess a 40\% larger series resistance. Furthermore, a 95\% EL enhancement was achieved by the employment of the SLG interlayer.",

author = "Li Lin and Yiyu Ou and Xiaolong Zhu and Eugen Stamate and Kaiyu Wu and Meng Liang and Zhiqiang Liu and Xiaoyan Yi and Berit Herstr{\o}m and Anja Boisen and Flemming Jensen and Haiyan Ou",

note = "Publisher Copyright: {\textcopyright} 2018 Optical Society of America.",

year = "2018",

month = jul,

day = "1",

doi = "10.1364/OME.8.001818",

language = "英语",

volume = "8",

pages = "1818--1826",

journal = "Optical Materials Express",

issn = "2159-3930",

publisher = "Optica Publishing Group (formerly OSA)",

number = "7",

}

TY - JOUR

T1 - InGaN/GaN ultraviolet LED with a graphene/AZO transparent current spreading layer

AU - Lin, Li

AU - Ou, Yiyu

AU - Zhu, Xiaolong

AU - Stamate, Eugen

AU - Wu, Kaiyu

AU - Liang, Meng

AU - Liu, Zhiqiang

AU - Yi, Xiaoyan

AU - Herstrøm, Berit

AU - Boisen, Anja

AU - Jensen, Flemming

AU - Ou, Haiyan

PY - 2018/7/1

Y1 - 2018/7/1

N2 - We report an approach of using an interlayer of single layer graphene (SLG) for electroluminescence (EL) enhancement of an InGaN/GaN-based near-ultraviolet (NUV) light-emitting diode (LED) with an aluminum-doped zinc oxide (AZO)-based current spreading layer (CSL). AZO-based CSLs with and without a SLG interlayer were fabricated on the NUV LED epi-wafers. The current-voltage (I-V) characteristic and the EL intensity were measured and compared. We find that the LED without the SLG interlayer can possess a 40% larger series resistance. Furthermore, a 95% EL enhancement was achieved by the employment of the SLG interlayer.

AB - We report an approach of using an interlayer of single layer graphene (SLG) for electroluminescence (EL) enhancement of an InGaN/GaN-based near-ultraviolet (NUV) light-emitting diode (LED) with an aluminum-doped zinc oxide (AZO)-based current spreading layer (CSL). AZO-based CSLs with and without a SLG interlayer were fabricated on the NUV LED epi-wafers. The current-voltage (I-V) characteristic and the EL intensity were measured and compared. We find that the LED without the SLG interlayer can possess a 40% larger series resistance. Furthermore, a 95% EL enhancement was achieved by the employment of the SLG interlayer.

UR - https://www.scopus.com/pages/publications/85048694836

U2 - 10.1364/OME.8.001818

DO - 10.1364/OME.8.001818

M3 - 文章

AN - SCOPUS:85048694836

SN - 2159-3930

VL - 8

SP - 1818

EP - 1826

JO - Optical Materials Express

JF - Optical Materials Express

IS - 7

ER -

InGaN/GaN ultraviolet LED with a graphene/AZO transparent current spreading layer

Abstract

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