Abstract
The double modulation technique with an attached high frequency modulation and lock-in measuring method added to the normal Michelson modulation was induced in normal Fourier transform infrared luminescence measurements, to eliminate the huge influences from the room temperature background blackbody emission. The photoluminescence spectra in the range of 10μm from narrow gap Hg0.79Cd0.21Te bulk sample, which consist of the luminescence from the radiative recombinations of band to band and shallow impurity level to band were obtained. The shallow impurity level of 4meV was hereby determined.
| Original language | English |
|---|---|
| Pages (from-to) | 175-176 |
| Number of pages | 2 |
| Journal | Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves |
| Volume | 19 |
| Issue number | 3 |
| State | Published - 2000 |
| Externally published | Yes |
Keywords
- Hgcdte
- Narrow gap semiconductor
- Photoluminescence