Infrared photoluminescence from narrow gap Hg0.79Cd0.21zTe

  • Yong Chang*
  • , Xiao Guang Wang
  • , Wen Guo Tang
  • , Jun Hao Chu
  • *Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

The double modulation technique with an attached high frequency modulation and lock-in measuring method added to the normal Michelson modulation was induced in normal Fourier transform infrared luminescence measurements, to eliminate the huge influences from the room temperature background blackbody emission. The photoluminescence spectra in the range of 10μm from narrow gap Hg0.79Cd0.21Te bulk sample, which consist of the luminescence from the radiative recombinations of band to band and shallow impurity level to band were obtained. The shallow impurity level of 4meV was hereby determined.

Original languageEnglish
Pages (from-to)175-176
Number of pages2
JournalHongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves
Volume19
Issue number3
StatePublished - 2000
Externally publishedYes

Keywords

  • Hgcdte
  • Narrow gap semiconductor
  • Photoluminescence

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