TY - JOUR
T1 - Infrared photoluminescence characterization of HgCdTe film
AU - Chang, Yong
AU - Chu, Junhao
AU - Ji, Rongbin
AU - Wang, X. G.
AU - Huang, Gensheng
AU - Li, J. F.
AU - He, Li
AU - Tang, Dingyuan
N1 - Publisher Copyright:
© 200 COPYRIGHT SPIE.
PY - 2000
Y1 - 2000
N2 - The Fourier transform and double modulation Fourier transform photoluminescence measurements were performed on HgCdTe films from liquid helium temperature to room temperature in the infrared band to 10 micrometers where the influence from room temperature background blackbody emission is very strong. From the band to band transition photoluminescence peak, which dominated in HgCdTe films with the small cadmium composition, the cadmium composition, crystal-quality-related band tail energy, and the active energy of the non-radiative Shockly-Read center, are obtained. The photoluminescence characterization method is also used to investigate the intentionally doped impurity behavior in HgCdTe. The amphoteric impurity behavior of As implanted in HgCdTe is discovered with the donor and acceptor energy level of 8.5 meV and 31.5 meV, respectively. The Ag impurity level of 70 meV in MBE HgCdTe is also found.
AB - The Fourier transform and double modulation Fourier transform photoluminescence measurements were performed on HgCdTe films from liquid helium temperature to room temperature in the infrared band to 10 micrometers where the influence from room temperature background blackbody emission is very strong. From the band to band transition photoluminescence peak, which dominated in HgCdTe films with the small cadmium composition, the cadmium composition, crystal-quality-related band tail energy, and the active energy of the non-radiative Shockly-Read center, are obtained. The photoluminescence characterization method is also used to investigate the intentionally doped impurity behavior in HgCdTe. The amphoteric impurity behavior of As implanted in HgCdTe is discovered with the donor and acceptor energy level of 8.5 meV and 31.5 meV, respectively. The Ag impurity level of 70 meV in MBE HgCdTe is also found.
UR - https://www.scopus.com/pages/publications/85089097250
U2 - 10.1117/12.408425
DO - 10.1117/12.408425
M3 - 会议文章
AN - SCOPUS:85089097250
SN - 0277-786X
VL - 4086
SP - 182
EP - 185
JO - Proceedings of SPIE - The International Society for Optical Engineering
JF - Proceedings of SPIE - The International Society for Optical Engineering
T2 - 4th International Conference on Thin Film Physics and Applications
Y2 - 8 May 2000 through 11 May 2000
ER -