Infrared optical properties of LaNiO3-platinized silicon and PbZrχTi1-χO3-LaNiO 3-platinized silicon heterostructures

J. Yu; Z. M. Huang; X. J. Meng; J. L. Sun; J. H. Chu; D. Y. Tang

doi:10.1063/1.1347403

Infrared optical properties of LaNiO₃-platinized silicon and PbZr_χTi_1-χO₃-LaNiO ₃-platinized silicon heterostructures

J. Yu, Z. M. Huang, X. J. Meng, J. L. Sun, J. H. Chu, D. Y. Tang

CAS - Shanghai Institute of Technical Physics

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

Abstract

Using infrared spectroscopic ellipsometry, the optical constants of LaNiO₃ thin films on Pt(111)-Ti-SiO₂-Si substrates are obtained in the 2.5-12.6 μm range, in which the infrared optical constants decrease when the annealing temperature increases from 600 to 650°C. At the same time, the infrared optical properties of PbZr_χTi_1-χO₃(PZT) thin films with χ = 0.3 and 0.5 on LaNiO₃-Pt-Ti-SiO₂-Si substrates are simultaneously studied with respect to annealing temperatures. The infrared optical properties are associated closely with the grain size and crystallographic orientation of the films induced by annealing temperature, combined by the particular substrate. For the Ni-PZT-LaNiO₃-Pt multilayer heterostructures, the infrared absorptance better than 99% can be achieved for PZT pyroelectric thin film infrared microsensors.

Original language	English
Pages (from-to)	793-795
Number of pages	3
Journal	Applied Physics Letters
Volume	78
Issue number	6
DOIs	https://doi.org/10.1063/1.1347403
State	Published - 5 Feb 2001
Externally published	Yes

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title = "Infrared optical properties of LaNiO3-platinized silicon and PbZrχTi1-χO3-LaNiO 3-platinized silicon heterostructures",

abstract = "Using infrared spectroscopic ellipsometry, the optical constants of LaNiO3 thin films on Pt(111)-Ti-SiO2-Si substrates are obtained in the 2.5-12.6 μm range, in which the infrared optical constants decrease when the annealing temperature increases from 600 to 650°C. At the same time, the infrared optical properties of PbZrχTi1-χO3(PZT) thin films with χ = 0.3 and 0.5 on LaNiO3-Pt-Ti-SiO2-Si substrates are simultaneously studied with respect to annealing temperatures. The infrared optical properties are associated closely with the grain size and crystallographic orientation of the films induced by annealing temperature, combined by the particular substrate. For the Ni-PZT-LaNiO3-Pt multilayer heterostructures, the infrared absorptance better than 99\% can be achieved for PZT pyroelectric thin film infrared microsensors.",

author = "J. Yu and Huang, \{Z. M.\} and Meng, \{X. J.\} and Sun, \{J. L.\} and Chu, \{J. H.\} and Tang, \{D. Y.\}",

year = "2001",

month = feb,

day = "5",

doi = "10.1063/1.1347403",

language = "英语",

volume = "78",

pages = "793--795",

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T1 - Infrared optical properties of LaNiO3-platinized silicon and PbZrχTi1-χO3-LaNiO 3-platinized silicon heterostructures

AU - Yu, J.

AU - Huang, Z. M.

AU - Meng, X. J.

AU - Sun, J. L.

AU - Chu, J. H.

AU - Tang, D. Y.

PY - 2001/2/5

Y1 - 2001/2/5

N2 - Using infrared spectroscopic ellipsometry, the optical constants of LaNiO3 thin films on Pt(111)-Ti-SiO2-Si substrates are obtained in the 2.5-12.6 μm range, in which the infrared optical constants decrease when the annealing temperature increases from 600 to 650°C. At the same time, the infrared optical properties of PbZrχTi1-χO3(PZT) thin films with χ = 0.3 and 0.5 on LaNiO3-Pt-Ti-SiO2-Si substrates are simultaneously studied with respect to annealing temperatures. The infrared optical properties are associated closely with the grain size and crystallographic orientation of the films induced by annealing temperature, combined by the particular substrate. For the Ni-PZT-LaNiO3-Pt multilayer heterostructures, the infrared absorptance better than 99% can be achieved for PZT pyroelectric thin film infrared microsensors.

AB - Using infrared spectroscopic ellipsometry, the optical constants of LaNiO3 thin films on Pt(111)-Ti-SiO2-Si substrates are obtained in the 2.5-12.6 μm range, in which the infrared optical constants decrease when the annealing temperature increases from 600 to 650°C. At the same time, the infrared optical properties of PbZrχTi1-χO3(PZT) thin films with χ = 0.3 and 0.5 on LaNiO3-Pt-Ti-SiO2-Si substrates are simultaneously studied with respect to annealing temperatures. The infrared optical properties are associated closely with the grain size and crystallographic orientation of the films induced by annealing temperature, combined by the particular substrate. For the Ni-PZT-LaNiO3-Pt multilayer heterostructures, the infrared absorptance better than 99% can be achieved for PZT pyroelectric thin film infrared microsensors.

UR - https://www.scopus.com/pages/publications/0010243803

U2 - 10.1063/1.1347403

DO - 10.1063/1.1347403

M3 - 文章

AN - SCOPUS:0010243803

SN - 0003-6951

VL - 78

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 6

ER -

Infrared optical properties of LaNiO₃-platinized silicon and PbZr_χTi_1-χO₃-LaNiO ₃-platinized silicon heterostructures

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