Abstract
Bi2Ti2O7 thin films were deposited on n-GaAs(100) by chemical solution decomposition technique. The infrared optical properties of the thin films were measured by infrared spectroscopic ellipsometry in the wavelength range of 2.8-12.5μm. Lorentz-Drude dispersion model was used to express the infrared dielectric constants of the thin films, and the refractive index, the extinction coefficient and the absorption coefficient of the thin films were calculated. The thickness of the thin films was determined as 139.2 nm by fitting.
| Original language | English |
|---|---|
| Pages (from-to) | 47-50 |
| Number of pages | 4 |
| Journal | Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves |
| Volume | 23 |
| Issue number | 1 |
| State | Published - Feb 2004 |
| Externally published | Yes |
Keywords
- BiTiO thin film
- Chemical solution decomposition technique
- Infrared optical properties
- Infrared spectroscopic ellipsometry