Abstract
Two-dimensional (2D) complex nanostructures on the surface of ZnO crystal are fabricated by the interference of three 800 nm fs laser beams. The 2D nanostructures exhibit a great enhancement of UV emission excited by infrared fs laser with central wavelengths ranging from 1,200 nm to 2,000 nm. We propose that the defect states in the band gap of 2D nanostructures induced by 800 nm fs laser ablation cause the great enhancement of UV emission. We make theoretical calculations and explain well with the experimental results.
| Original language | English |
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| Pages (from-to) | 1923-1932 |
| Number of pages | 10 |
| Journal | Applied Physics A: Materials Science and Processing |
| Volume | 117 |
| Issue number | 4 |
| DOIs | |
| State | Published - 18 Nov 2014 |