Infrared emission bands and thermal effects for 440-nm-emitting GaN-based laser diodes

Feng Mao; Jin Hong; Han Wang; Ye Chen; Chengbin Jing; Pingxiong Yang; Jens W. Tomm; Junhao Chu; Fangyu Yue

doi:10.1063/1.5143802

Infrared emission bands and thermal effects for 440-nm-emitting GaN-based laser diodes

Feng Mao
, Jin Hong
, Han Wang
, Ye Chen
, Chengbin Jing
, Pingxiong Yang
, Jens W. Tomm
, Junhao Chu
, Fangyu Yue^*

^*Corresponding author for this work

School of Physics and Electronic Science

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

Broad emission bands due to defects in (In,Ga,Al)N laser diodes operating at 440 nm are investigated using continuous-wave and pulsed currents. In addition to known yellow-green and short-wave infrared bands, defect emissions were observed even in the medium-wave infrared range. A separation from thermal radiation is possible. When using pulsed currents, a super-linearly increasing emission occurs at ∼1150 nm, which could be attributed to amplified spontaneous emission mainly due to the electroluminescence of deep defects in the optically active region. These results may be useful in interpreting the output power bottleneck of GaN-based lasers compared to mature GaAs-based lasers.

Original language	English
Article number	055311
Journal	AIP Advances
Volume	10
Issue number	5
DOIs	https://doi.org/10.1063/1.5143802
State	Published - 1 May 2020

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title = "Infrared emission bands and thermal effects for 440-nm-emitting GaN-based laser diodes",

abstract = "Broad emission bands due to defects in (In,Ga,Al)N laser diodes operating at 440 nm are investigated using continuous-wave and pulsed currents. In addition to known yellow-green and short-wave infrared bands, defect emissions were observed even in the medium-wave infrared range. A separation from thermal radiation is possible. When using pulsed currents, a super-linearly increasing emission occurs at ∼1150 nm, which could be attributed to amplified spontaneous emission mainly due to the electroluminescence of deep defects in the optically active region. These results may be useful in interpreting the output power bottleneck of GaN-based lasers compared to mature GaAs-based lasers.",

author = "Feng Mao and Jin Hong and Han Wang and Ye Chen and Chengbin Jing and Pingxiong Yang and Tomm, \{Jens W.\} and Junhao Chu and Fangyu Yue",

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T1 - Infrared emission bands and thermal effects for 440-nm-emitting GaN-based laser diodes

AU - Mao, Feng

AU - Hong, Jin

AU - Wang, Han

AU - Chen, Ye

AU - Jing, Chengbin

AU - Yang, Pingxiong

AU - Tomm, Jens W.

AU - Chu, Junhao

AU - Yue, Fangyu

N1 - Publisher Copyright: © 2020 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/). https://doi.org/10.1063/1.5143802

PY - 2020/5/1

Y1 - 2020/5/1

N2 - Broad emission bands due to defects in (In,Ga,Al)N laser diodes operating at 440 nm are investigated using continuous-wave and pulsed currents. In addition to known yellow-green and short-wave infrared bands, defect emissions were observed even in the medium-wave infrared range. A separation from thermal radiation is possible. When using pulsed currents, a super-linearly increasing emission occurs at ∼1150 nm, which could be attributed to amplified spontaneous emission mainly due to the electroluminescence of deep defects in the optically active region. These results may be useful in interpreting the output power bottleneck of GaN-based lasers compared to mature GaAs-based lasers.

AB - Broad emission bands due to defects in (In,Ga,Al)N laser diodes operating at 440 nm are investigated using continuous-wave and pulsed currents. In addition to known yellow-green and short-wave infrared bands, defect emissions were observed even in the medium-wave infrared range. A separation from thermal radiation is possible. When using pulsed currents, a super-linearly increasing emission occurs at ∼1150 nm, which could be attributed to amplified spontaneous emission mainly due to the electroluminescence of deep defects in the optically active region. These results may be useful in interpreting the output power bottleneck of GaN-based lasers compared to mature GaAs-based lasers.

UR - https://www.scopus.com/pages/publications/85088396922

U2 - 10.1063/1.5143802

DO - 10.1063/1.5143802

M3 - 文章

AN - SCOPUS:85088396922

SN - 2158-3226

VL - 10

JO - AIP Advances

JF - AIP Advances

IS - 5

M1 - 055311

ER -

Infrared emission bands and thermal effects for 440-nm-emitting GaN-based laser diodes

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