Infrared dielectric properties of BaTiO3 ultrathin films

S. J. Liu; X. Y. Zhao; G. Pan; G. F. Su; Z. M. Huang; J. H. Chu

doi:10.1117/12.792632

Infrared dielectric properties of BaTiO₃ ultrathin films

S. J. Liu, X. Y. Zhao, G. Pan, G. F. Su, Z. M. Huang, J. H. Chu

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Using high accurate infrared spectroscopic ellipsometry, the infrared dielectric constants of BaTiO₃ ultrathin films are obtained in the temperature ranging from 20 to 150°C, which were deposited on Pt-Ti-SiO ₂-Si substrate by radio frequency magnetron sputtering. The high frequency dielectric function of the BaTiO₃ ultrathin films shows the temperature dependence from the tetragonal to the cubic phase transition. The results suggest that the temperature dependence of the BaTiO₃ ultrathin films' infrared dielectric properties should be considered in the technological applications and theoretical investigations.

Original language	English
Title of host publication	Sixth International Conference on Thin Film Physics and Applications
DOIs	https://doi.org/10.1117/12.792632
State	Published - 2008
Externally published	Yes
Event	6th International Conference on Thin Film Physics and Applications, TFPA 2007 - Shanghai, China Duration: 25 Sep 2007 → 28 Sep 2007

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	6984
ISSN (Print)	0277-786X

Conference

Conference	6th International Conference on Thin Film Physics and Applications, TFPA 2007
Country/Territory	China
City	Shanghai
Period	25/09/07 → 28/09/07

Keywords

BaTiO ultrathin films
Infrared dielectric properties
Phase transition
Temperature dependence

Access to Document

10.1117/12.792632

Cite this

@inproceedings{59bca53f4d9d4099bb120e5876f73af4,

title = "Infrared dielectric properties of BaTiO3 ultrathin films",

abstract = "Using high accurate infrared spectroscopic ellipsometry, the infrared dielectric constants of BaTiO3 ultrathin films are obtained in the temperature ranging from 20 to 150°C, which were deposited on Pt-Ti-SiO 2-Si substrate by radio frequency magnetron sputtering. The high frequency dielectric function of the BaTiO3 ultrathin films shows the temperature dependence from the tetragonal to the cubic phase transition. The results suggest that the temperature dependence of the BaTiO3 ultrathin films' infrared dielectric properties should be considered in the technological applications and theoretical investigations.",

keywords = "BaTiO ultrathin films, Infrared dielectric properties, Phase transition, Temperature dependence",

author = "Liu, \{S. J.\} and Zhao, \{X. Y.\} and G. Pan and Su, \{G. F.\} and Huang, \{Z. M.\} and Chu, \{J. H.\}",

year = "2008",

doi = "10.1117/12.792632",

language = "英语",

isbn = "9780819471826",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

booktitle = "Sixth International Conference on Thin Film Physics and Applications",

note = "6th International Conference on Thin Film Physics and Applications, TFPA 2007 ; Conference date: 25-09-2007 Through 28-09-2007",

}

Liu, SJ, Zhao, XY, Pan, G, Su, GF, Huang, ZM & Chu, JH 2008, Infrared dielectric properties of BaTiO₃ ultrathin films. in Sixth International Conference on Thin Film Physics and Applications., 69841N, Proceedings of SPIE - The International Society for Optical Engineering, vol. 6984, 6th International Conference on Thin Film Physics and Applications, TFPA 2007, Shanghai, China, 25/09/07. https://doi.org/10.1117/12.792632

Infrared dielectric properties of BaTiO₃ ultrathin films. / Liu, S. J.; Zhao, X. Y.; Pan, G. et al.
Sixth International Conference on Thin Film Physics and Applications. 2008. 69841N (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 6984).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Infrared dielectric properties of BaTiO3 ultrathin films

AU - Liu, S. J.

AU - Zhao, X. Y.

AU - Pan, G.

AU - Su, G. F.

AU - Huang, Z. M.

AU - Chu, J. H.

PY - 2008

Y1 - 2008

N2 - Using high accurate infrared spectroscopic ellipsometry, the infrared dielectric constants of BaTiO3 ultrathin films are obtained in the temperature ranging from 20 to 150°C, which were deposited on Pt-Ti-SiO 2-Si substrate by radio frequency magnetron sputtering. The high frequency dielectric function of the BaTiO3 ultrathin films shows the temperature dependence from the tetragonal to the cubic phase transition. The results suggest that the temperature dependence of the BaTiO3 ultrathin films' infrared dielectric properties should be considered in the technological applications and theoretical investigations.

AB - Using high accurate infrared spectroscopic ellipsometry, the infrared dielectric constants of BaTiO3 ultrathin films are obtained in the temperature ranging from 20 to 150°C, which were deposited on Pt-Ti-SiO 2-Si substrate by radio frequency magnetron sputtering. The high frequency dielectric function of the BaTiO3 ultrathin films shows the temperature dependence from the tetragonal to the cubic phase transition. The results suggest that the temperature dependence of the BaTiO3 ultrathin films' infrared dielectric properties should be considered in the technological applications and theoretical investigations.

KW - BaTiO ultrathin films

KW - Infrared dielectric properties

KW - Phase transition

KW - Temperature dependence

UR - https://www.scopus.com/pages/publications/42149118592

U2 - 10.1117/12.792632

DO - 10.1117/12.792632

M3 - 会议稿件

AN - SCOPUS:42149118592

SN - 9780819471826

T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - Sixth International Conference on Thin Film Physics and Applications

T2 - 6th International Conference on Thin Film Physics and Applications, TFPA 2007

Y2 - 25 September 2007 through 28 September 2007

ER -