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Influence of the magnetic field on the effective mass of the two-dimensional electron gas in AlxGa1-xN/GaN heterostructures

  • N. Tang
  • , B. Shen*
  • , M. J. Wang
  • , Z. J. Yang
  • , K. Xu
  • , G. Y. Zhang
  • , Y. S. Gui
  • , B. Zhu
  • , S. L. Guo
  • , J. H. Chu
  • , K. Hoshino
  • , Y. Arakawa
  • *Corresponding author for this work
  • Peking University
  • CAS - Shanghai Institute of Technical Physics
  • The University of Tokyo

Research output: Contribution to journalConference articlepeer-review

Abstract

The relationship between the magnetic field and the effective mass m* of the two-dimensional electron gas in the triangular quantum well at the heterointerface of modulation-doped Al0.15Ga0.85N/GaN heterostructures is investigated by means of temperature-dependent Shubnikov-de Haas measurements at low temperatures and high magnetic fields. The values of the m* have strong dependence on the magnetic field, which is thought to be attributed to conduction-band nonparabolicity of GaN.

Original languageEnglish
Pages (from-to)2246-2249
Number of pages4
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume3
DOIs
StatePublished - 2006
Externally publishedYes
Event6th International Conference on Nitride Semiconductors, ICNS-6 - Bremen, Germany
Duration: 28 Aug 20052 Sep 2005

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