Influence of the magnetic field on the effective mass of the two-dimensional electron gas in AlxGa1-xN/GaN heterostructures

N. Tang, B. Shen, M. J. Wang, Z. J. Yang, K. Xu, G. Y. Zhang, Y. S. Gui, B. Zhu, S. L. Guo, J. H. Chu, K. Hoshino, Y. Arakawa

Research output: Contribution to journalConference articlepeer-review

6 Scopus citations

Abstract

The relationship between the magnetic field and the effective mass m* of the two-dimensional electron gas in the triangular quantum well at the heterointerface of modulation-doped Al0.15Ga0.85N/GaN heterostructures is investigated by means of temperature-dependent Shubnikov-de Haas measurements at low temperatures and high magnetic fields. The values of the m* have strong dependence on the magnetic field, which is thought to be attributed to conduction-band nonparabolicity of GaN.

Original languageEnglish
Pages (from-to)2246-2249
Number of pages4
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume3
DOIs
StatePublished - 2006
Externally publishedYes
Event6th International Conference on Nitride Semiconductors, ICNS-6 - Bremen, Germany
Duration: 28 Aug 20052 Sep 2005

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