Abstract
The relationship between the magnetic field and the effective mass m* of the two-dimensional electron gas in the triangular quantum well at the heterointerface of modulation-doped Al0.15Ga0.85N/GaN heterostructures is investigated by means of temperature-dependent Shubnikov-de Haas measurements at low temperatures and high magnetic fields. The values of the m* have strong dependence on the magnetic field, which is thought to be attributed to conduction-band nonparabolicity of GaN.
| Original language | English |
|---|---|
| Pages (from-to) | 2246-2249 |
| Number of pages | 4 |
| Journal | Physica Status Solidi (C) Current Topics in Solid State Physics |
| Volume | 3 |
| DOIs | |
| State | Published - 2006 |
| Externally published | Yes |
| Event | 6th International Conference on Nitride Semiconductors, ICNS-6 - Bremen, Germany Duration: 28 Aug 2005 → 2 Sep 2005 |