Influence of the illumination on weak antilocalization in an Al xGa1-xN/GaN heterostructure with strong spin-orbit coupling

W. Z. Zhou, T. Lin, L. Y. Shang, L. Sun, K. H. Gao, Y. M. Zhou, G. Yu, N. Tang, K. Han, B. Shen, S. L. Guo, Y. S. Gui, J. H. Chu

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Abstract

The weak antilocalization effects of the two-dimensional electron gas in a high mobility AlxGa1-xN/GaN heterostructure have been investigated by means of magnetotransport measurements before and after illumination. The zero-field spin splitting mainly arising from the Rashba spin-orbit coupling effect as a function of electron concentration as well as a function of temperature is studied using the weak antilocalization analysis. The Rashba spin-orbit coupling constant α deduced using the weak antilocalization analysis shows a rapid decrease with the increase of the measured electron concentration.

Original languageEnglish
Article number262104
JournalApplied Physics Letters
Volume93
Issue number26
DOIs
StatePublished - 2008

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