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Influence of the illumination on weak antilocalization in an Al xGa1-xN/GaN heterostructure with strong spin-orbit coupling

  • W. Z. Zhou
  • , T. Lin
  • , L. Y. Shang
  • , L. Sun
  • , K. H. Gao
  • , Y. M. Zhou
  • , G. Yu
  • , N. Tang
  • , K. Han
  • , B. Shen
  • , S. L. Guo
  • , Y. S. Gui
  • , J. H. Chu
  • East China Normal University
  • Guangxi University
  • CAS - Shanghai Institute of Technical Physics
  • Peking University

Research output: Contribution to journalArticlepeer-review

Abstract

The weak antilocalization effects of the two-dimensional electron gas in a high mobility AlxGa1-xN/GaN heterostructure have been investigated by means of magnetotransport measurements before and after illumination. The zero-field spin splitting mainly arising from the Rashba spin-orbit coupling effect as a function of electron concentration as well as a function of temperature is studied using the weak antilocalization analysis. The Rashba spin-orbit coupling constant α deduced using the weak antilocalization analysis shows a rapid decrease with the increase of the measured electron concentration.

Original languageEnglish
Article number262104
JournalApplied Physics Letters
Volume93
Issue number26
DOIs
StatePublished - 2008

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