Influence of the illumination on the subband structure and occupation in Al x Ga1-x N/GaN heterostructures

Ning Tang; Bo Shen; Kui Han; Xiao Wei He; Chun Ming Yin; Zhi Jian Yang; Zhi Xin Qin; Guo Yi Zhang; Tie Lin; Wen Zheng Zhou; Li Yan Shang; Jun Hao Chu

doi:10.1007/s00339-009-5104-7

Influence of the illumination on the subband structure and occupation in Al _x Ga_1-x N/GaN heterostructures

Ning Tang, Bo Shen, Kui Han, Xiao Wei He, Chun Ming Yin, Zhi Jian Yang, Zhi Xin Qin, Guo Yi Zhang, Tie Lin, Wen Zheng Zhou, Li Yan Shang, Jun Hao Chu

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2 Scopus citations

Abstract

The subband structure and occupation in the triangular quantum well at Al _x Ga_1-x N/GaN heterointerfaces have been investigated by means of temperature dependent Shubnikov-de Haas (SdH) measurements at low temperatures and high magnetic fields under illumination. After the illumination of the heterostructures, the total two-dimensional electron gas concentration increases, and the SdH oscillation amplitudes are enhanced when there is no additional subband occupation. It is also found that the energy separation between the subbands decreases after the illumination. We suggest that the illumination decreases the electric field and thus weakens the quantum confinement of the triangular quantum well at Al _x Ga_1-x N/GaN heterointerfaces. The GaN layer is thought to be the primary contributor of the excited electrons by the illumination.

Original language	English
Pages (from-to)	953-957
Number of pages	5
Journal	Applied Physics A: Materials Science and Processing
Volume	96
Issue number	4
DOIs	https://doi.org/10.1007/s00339-009-5104-7
State	Published - Sep 2009
Externally published	Yes

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title = "Influence of the illumination on the subband structure and occupation in Al x Ga1-x N/GaN heterostructures",

abstract = "The subband structure and occupation in the triangular quantum well at Al x Ga1-x N/GaN heterointerfaces have been investigated by means of temperature dependent Shubnikov-de Haas (SdH) measurements at low temperatures and high magnetic fields under illumination. After the illumination of the heterostructures, the total two-dimensional electron gas concentration increases, and the SdH oscillation amplitudes are enhanced when there is no additional subband occupation. It is also found that the energy separation between the subbands decreases after the illumination. We suggest that the illumination decreases the electric field and thus weakens the quantum confinement of the triangular quantum well at Al x Ga1-x N/GaN heterointerfaces. The GaN layer is thought to be the primary contributor of the excited electrons by the illumination.",

author = "Ning Tang and Bo Shen and Kui Han and He, \{Xiao Wei\} and Yin, \{Chun Ming\} and Yang, \{Zhi Jian\} and Qin, \{Zhi Xin\} and Zhang, \{Guo Yi\} and Tie Lin and Zhou, \{Wen Zheng\} and Shang, \{Li Yan\} and Chu, \{Jun Hao\}",

year = "2009",

month = sep,

doi = "10.1007/s00339-009-5104-7",

language = "英语",

volume = "96",

pages = "953--957",

journal = "Applied Physics A: Materials Science and Processing",

issn = "0947-8396",

publisher = "Springer Heidelberg",

number = "4",

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TY - JOUR

T1 - Influence of the illumination on the subband structure and occupation in Al x Ga1-x N/GaN heterostructures

AU - Tang, Ning

AU - Shen, Bo

AU - Han, Kui

AU - He, Xiao Wei

AU - Yin, Chun Ming

AU - Yang, Zhi Jian

AU - Qin, Zhi Xin

AU - Zhang, Guo Yi

AU - Lin, Tie

AU - Zhou, Wen Zheng

AU - Shang, Li Yan

AU - Chu, Jun Hao

PY - 2009/9

Y1 - 2009/9

N2 - The subband structure and occupation in the triangular quantum well at Al x Ga1-x N/GaN heterointerfaces have been investigated by means of temperature dependent Shubnikov-de Haas (SdH) measurements at low temperatures and high magnetic fields under illumination. After the illumination of the heterostructures, the total two-dimensional electron gas concentration increases, and the SdH oscillation amplitudes are enhanced when there is no additional subband occupation. It is also found that the energy separation between the subbands decreases after the illumination. We suggest that the illumination decreases the electric field and thus weakens the quantum confinement of the triangular quantum well at Al x Ga1-x N/GaN heterointerfaces. The GaN layer is thought to be the primary contributor of the excited electrons by the illumination.

AB - The subband structure and occupation in the triangular quantum well at Al x Ga1-x N/GaN heterointerfaces have been investigated by means of temperature dependent Shubnikov-de Haas (SdH) measurements at low temperatures and high magnetic fields under illumination. After the illumination of the heterostructures, the total two-dimensional electron gas concentration increases, and the SdH oscillation amplitudes are enhanced when there is no additional subband occupation. It is also found that the energy separation between the subbands decreases after the illumination. We suggest that the illumination decreases the electric field and thus weakens the quantum confinement of the triangular quantum well at Al x Ga1-x N/GaN heterointerfaces. The GaN layer is thought to be the primary contributor of the excited electrons by the illumination.

UR - https://www.scopus.com/pages/publications/70350567764

U2 - 10.1007/s00339-009-5104-7

DO - 10.1007/s00339-009-5104-7

M3 - 文章

AN - SCOPUS:70350567764

SN - 0947-8396

VL - 96

SP - 953

EP - 957

JO - Applied Physics A: Materials Science and Processing

JF - Applied Physics A: Materials Science and Processing

IS - 4

ER -

Influence of the illumination on the subband structure and occupation in Al _x Ga_1-x N/GaN heterostructures

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