Influence of the illumination on the spin splitting of the two-dimensional electron gas in AlxGa1-xN/GaN heterostructures

N. Tang, B. Shen, X. W. He, K. Han, Y. Q. Tang, Z. J. Yang, Z. X. Qin, G. Y. Zhang, T. Lin, B. Zhu, W. Z. Zhou, L. Y. Shang, J. H. Chu

Research output: Contribution to journalConference articlepeer-review

Abstract

Spin splitting of the two-dimensional electron gas (2DEG) in Al xGa1-xN/GaN heterostructures has been investigated by means of magnetotransport measurements under the illumination at low temperatures. The beating patterns in the oscillatory magnetoresistance originating from zero-field spin splitting of the 2DEG are observed in this study. It is found that the spin splitting energy decreases after the illumination. It is also found that the illumination decreases the electric field at AlxGa1-xN/GaN heterointerfaces. Based on the experiments, it is suggested that the zero-field spin splitting of the 2DEG in AlxGa1-xN/GaN heterostructures mainly arises from the Rashba effect.

Original languageEnglish
Pages (from-to)2339-2341
Number of pages3
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume5
Issue number6
DOIs
StatePublished - 2008
Externally publishedYes
Event7th International Conference of Nitride Semiconductors, ICNS-7 - Las Vegas, NV, United States
Duration: 16 Sep 200721 Sep 2007

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