Influence of the illumination on the beating patterns in the oscillatory magnetoresistance in Alx Ga1-x NGaN heterostructures

Ning Tang; Bo Shen; Xiao Wei He; Kui Han; Zhi Jian Yang; Zhi Xin Qin; Guo Yi Zhang; Tie Lin; Bo Zhu; Wen Zheng Zhou; Li Yan Shang; Jun Hao Chu

doi:10.1103/PhysRevB.76.155303

Influence of the illumination on the beating patterns in the oscillatory magnetoresistance in Alx Ga1-x NGaN heterostructures

Ning Tang, Bo Shen, Xiao Wei He, Kui Han, Zhi Jian Yang, Zhi Xin Qin, Guo Yi Zhang, Tie Lin, Bo Zhu, Wen Zheng Zhou, Li Yan Shang, Jun Hao Chu

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11 Scopus citations

Abstract

The beating patterns in the oscillatory magnetoresistance originating from zero-field spin-splitting and magnetointersubband scattering (MIS) effects of the two-dimensional electron gas (2DEG) in Alx Ga1-x NGaN heterostructures have been investigated by means of magnetotransport measurements under illumination. It is observed that the energy separation between the two subbands decreases due to the weakened electric field at the Alx Ga1-x NGaN heterointerfaces after the illumination. Meanwhile, the beating nodes induced by the MIS effect shift to higher magnetic field due to the increase of the 2DEG concentration at the second subband, and the beating nodes induced by the zero-field spin-splitting effect shift to lower magnetic field due to the decrease of the spin-splitting energy of the 2DEG. Since the weakened electric field decreases the zero-field spin-splitting energy, it is suggested that the zero-field spin splitting of the 2DEG in Alx Ga1-x NGaN heterostructures mainly arises from the Rashba effect.

Original language	English
Article number	155303
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	76
Issue number	15
DOIs	https://doi.org/10.1103/PhysRevB.76.155303
State	Published - 3 Oct 2007
Externally published	Yes

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Tang, N., Shen, B., He, X. W., Han, K., Yang, Z. J., Qin, Z. X., Zhang, G. Y., Lin, T., Zhu, B., Zhou, W. Z., Shang, L. Y., & Chu, J. H. (2007). Influence of the illumination on the beating patterns in the oscillatory magnetoresistance in Alx Ga1-x NGaN heterostructures. Physical Review B - Condensed Matter and Materials Physics, 76(15), Article 155303. https://doi.org/10.1103/PhysRevB.76.155303

@article{8d1c761a9a48431bab9f89577e9ae5c1,

title = "Influence of the illumination on the beating patterns in the oscillatory magnetoresistance in Alx Ga1-x NGaN heterostructures",

abstract = "The beating patterns in the oscillatory magnetoresistance originating from zero-field spin-splitting and magnetointersubband scattering (MIS) effects of the two-dimensional electron gas (2DEG) in Alx Ga1-x NGaN heterostructures have been investigated by means of magnetotransport measurements under illumination. It is observed that the energy separation between the two subbands decreases due to the weakened electric field at the Alx Ga1-x NGaN heterointerfaces after the illumination. Meanwhile, the beating nodes induced by the MIS effect shift to higher magnetic field due to the increase of the 2DEG concentration at the second subband, and the beating nodes induced by the zero-field spin-splitting effect shift to lower magnetic field due to the decrease of the spin-splitting energy of the 2DEG. Since the weakened electric field decreases the zero-field spin-splitting energy, it is suggested that the zero-field spin splitting of the 2DEG in Alx Ga1-x NGaN heterostructures mainly arises from the Rashba effect.",

author = "Ning Tang and Bo Shen and He, \{Xiao Wei\} and Kui Han and Yang, \{Zhi Jian\} and Qin, \{Zhi Xin\} and Zhang, \{Guo Yi\} and Tie Lin and Bo Zhu and Zhou, \{Wen Zheng\} and Shang, \{Li Yan\} and Chu, \{Jun Hao\}",

year = "2007",

month = oct,

day = "3",

doi = "10.1103/PhysRevB.76.155303",

language = "英语",

volume = "76",

journal = "Physical Review B - Condensed Matter and Materials Physics",

issn = "1098-0121",

publisher = "American Physical Society",

number = "15",

}

Tang, N, Shen, B, He, XW, Han, K, Yang, ZJ, Qin, ZX, Zhang, GY, Lin, T, Zhu, B, Zhou, WZ, Shang, LY & Chu, JH 2007, 'Influence of the illumination on the beating patterns in the oscillatory magnetoresistance in Alx Ga1-x NGaN heterostructures', Physical Review B - Condensed Matter and Materials Physics, vol. 76, no. 15, 155303. https://doi.org/10.1103/PhysRevB.76.155303

TY - JOUR

T1 - Influence of the illumination on the beating patterns in the oscillatory magnetoresistance in Alx Ga1-x NGaN heterostructures

AU - Tang, Ning

AU - Shen, Bo

AU - He, Xiao Wei

AU - Han, Kui

AU - Yang, Zhi Jian

AU - Qin, Zhi Xin

AU - Zhang, Guo Yi

AU - Lin, Tie

AU - Zhu, Bo

AU - Zhou, Wen Zheng

AU - Shang, Li Yan

AU - Chu, Jun Hao

PY - 2007/10/3

Y1 - 2007/10/3

N2 - The beating patterns in the oscillatory magnetoresistance originating from zero-field spin-splitting and magnetointersubband scattering (MIS) effects of the two-dimensional electron gas (2DEG) in Alx Ga1-x NGaN heterostructures have been investigated by means of magnetotransport measurements under illumination. It is observed that the energy separation between the two subbands decreases due to the weakened electric field at the Alx Ga1-x NGaN heterointerfaces after the illumination. Meanwhile, the beating nodes induced by the MIS effect shift to higher magnetic field due to the increase of the 2DEG concentration at the second subband, and the beating nodes induced by the zero-field spin-splitting effect shift to lower magnetic field due to the decrease of the spin-splitting energy of the 2DEG. Since the weakened electric field decreases the zero-field spin-splitting energy, it is suggested that the zero-field spin splitting of the 2DEG in Alx Ga1-x NGaN heterostructures mainly arises from the Rashba effect.

AB - The beating patterns in the oscillatory magnetoresistance originating from zero-field spin-splitting and magnetointersubband scattering (MIS) effects of the two-dimensional electron gas (2DEG) in Alx Ga1-x NGaN heterostructures have been investigated by means of magnetotransport measurements under illumination. It is observed that the energy separation between the two subbands decreases due to the weakened electric field at the Alx Ga1-x NGaN heterointerfaces after the illumination. Meanwhile, the beating nodes induced by the MIS effect shift to higher magnetic field due to the increase of the 2DEG concentration at the second subband, and the beating nodes induced by the zero-field spin-splitting effect shift to lower magnetic field due to the decrease of the spin-splitting energy of the 2DEG. Since the weakened electric field decreases the zero-field spin-splitting energy, it is suggested that the zero-field spin splitting of the 2DEG in Alx Ga1-x NGaN heterostructures mainly arises from the Rashba effect.

UR - https://www.scopus.com/pages/publications/35148820105

U2 - 10.1103/PhysRevB.76.155303

DO - 10.1103/PhysRevB.76.155303

M3 - 文章

AN - SCOPUS:35148820105

SN - 1098-0121

VL - 76

JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

IS - 15

M1 - 155303

ER -

Influence of the illumination on the beating patterns in the oscillatory magnetoresistance in Alx Ga1-x NGaN heterostructures

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