Influence of strain on built-in dipole moment in asymmetric In xGa1-xAs quantum dot molecules

Jiqing Wang, Deshuang Shang, Huibing Mao, Jianguo Yu, Qiang Zhao, Pingxiong Yang, Huaizhong Xing

Research output: Contribution to journalArticlepeer-review

Abstract

Strain effects on a built-in electron-hole dipole moment are investigated in asymmetric InxGa1-xAs coupled quantum dots. We compute electron-hole separation as a function of alloy compositions for both electron and hole resonance cases. It is noted that the inclusion of strain enhances the built-in dipole moments and that the inverted electron-hole alignment is found for electron and hole resonances. Furthermore, the reversal of dipole moments gives rise to different asymmetric Stark shifts in each transition spectrum.

Original languageEnglish
Pages (from-to)391-394
Number of pages4
JournalApplied Physics A: Materials Science and Processing
Volume109
Issue number2
DOIs
StatePublished - Nov 2012

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