Influence of pretreatments and deposition parameters on diamond nucleation density in diamond film deposition by hot filament CVD

Zhuo Sun; Zhihao Zheng; Ning Xu

doi:10.1117/12.190719

Influence of pretreatments and deposition parameters on diamond nucleation density in diamond film deposition by hot filament CVD

Zhuo Sun
, Zhihao Zheng
, Ning Xu

School of Physics and Electronic Science

East China Normal University

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

In synthesis of diamond thin film by Hot Filment Chemical Vapor Deposition (HF-CVD), many factors can affect diamond nucleation. The mechanical pretreatments, scratching with diamond paste or ultrasonic irradiation with diamond powder suspensions, and the chemical pretreatment, such as erosion with a solution of HF-HNO, can create many defects on the surface of silicon substrate and promote the diamond nucleation density. Also, diamond nucleation density can be promoted with carbide intermediate layer or diamond-like carbon film on polished silicon substrate. Diamond nucleation can be varied with different deposition parameters, among the deposition parameters, CH₄/H₂ ratio and substrate temperatures influence the diamond nucleation effectively.

Original language	English
Pages (from-to)	582-587
Number of pages	6
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	2364
DOIs	https://doi.org/10.1117/12.190719
State	Published - 26 Oct 1994
Event	2nd International Conference on Thin Film Physics and Applications 1994 - Shanghai, China Duration: 15 Apr 1994 → 17 Apr 1994

Keywords

Diamond
HF-CVD
Nucleation
Pretreatment

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title = "Influence of pretreatments and deposition parameters on diamond nucleation density in diamond film deposition by hot filament CVD",

abstract = "In synthesis of diamond thin film by Hot Filment Chemical Vapor Deposition (HF-CVD), many factors can affect diamond nucleation. The mechanical pretreatments, scratching with diamond paste or ultrasonic irradiation with diamond powder suspensions, and the chemical pretreatment, such as erosion with a solution of HF-HNO, can create many defects on the surface of silicon substrate and promote the diamond nucleation density. Also, diamond nucleation density can be promoted with carbide intermediate layer or diamond-like carbon film on polished silicon substrate. Diamond nucleation can be varied with different deposition parameters, among the deposition parameters, CH4/H2 ratio and substrate temperatures influence the diamond nucleation effectively.",

keywords = "Diamond, HF-CVD, Nucleation, Pretreatment",

author = "Zhuo Sun and Zhihao Zheng and Ning Xu",

note = "Publisher Copyright: {\textcopyright} 1994 SPIE. All rights reserved.; 2nd International Conference on Thin Film Physics and Applications 1994 ; Conference date: 15-04-1994 Through 17-04-1994",

year = "1994",

month = oct,

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doi = "10.1117/12.190719",

language = "英语",

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T1 - Influence of pretreatments and deposition parameters on diamond nucleation density in diamond film deposition by hot filament CVD

AU - Sun, Zhuo

AU - Zheng, Zhihao

AU - Xu, Ning

PY - 1994/10/26

Y1 - 1994/10/26

N2 - In synthesis of diamond thin film by Hot Filment Chemical Vapor Deposition (HF-CVD), many factors can affect diamond nucleation. The mechanical pretreatments, scratching with diamond paste or ultrasonic irradiation with diamond powder suspensions, and the chemical pretreatment, such as erosion with a solution of HF-HNO, can create many defects on the surface of silicon substrate and promote the diamond nucleation density. Also, diamond nucleation density can be promoted with carbide intermediate layer or diamond-like carbon film on polished silicon substrate. Diamond nucleation can be varied with different deposition parameters, among the deposition parameters, CH4/H2 ratio and substrate temperatures influence the diamond nucleation effectively.

AB - In synthesis of diamond thin film by Hot Filment Chemical Vapor Deposition (HF-CVD), many factors can affect diamond nucleation. The mechanical pretreatments, scratching with diamond paste or ultrasonic irradiation with diamond powder suspensions, and the chemical pretreatment, such as erosion with a solution of HF-HNO, can create many defects on the surface of silicon substrate and promote the diamond nucleation density. Also, diamond nucleation density can be promoted with carbide intermediate layer or diamond-like carbon film on polished silicon substrate. Diamond nucleation can be varied with different deposition parameters, among the deposition parameters, CH4/H2 ratio and substrate temperatures influence the diamond nucleation effectively.

KW - Diamond

KW - HF-CVD

KW - Nucleation

KW - Pretreatment

UR - https://www.scopus.com/pages/publications/0028758256

U2 - 10.1117/12.190719

DO - 10.1117/12.190719

M3 - 会议文章

AN - SCOPUS:0028758256

SN - 0277-786X

VL - 2364

SP - 582

EP - 587

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - 2nd International Conference on Thin Film Physics and Applications 1994

Y2 - 15 April 1994 through 17 April 1994

ER -

Influence of pretreatments and deposition parameters on diamond nucleation density in diamond film deposition by hot filament CVD

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