Abstract
High quality β-Ga2O3-δ films on c-sapphire substrates are deposited by pulsed laser deposition (PLD) under various oxygen partial pressures. The crystalline structure, chemometry and optical properties of the β-Ga2O3-δ films are investigated systematically by X-ray diffraction (XRD), far-infrared reflectance spectra, X-ray photoelectron spectroscopy (XPS) and ultraviolet-visible-near infrared (UV-vis-NIR) transmittance spectra. The XRD analysis shows that all the as-deposited films are of unique (-201) orientation. The transmittance spectra reveal that the films exhibit a high transparency above 80% in the UV-vis-NIR wavelength region above 255 nm (4.863 eV). Moreover, the optical constants and optical direct bandgap are extracted based on the transmittance spectra with Tauc-Lorentz (TL) dispersion function model and Tauc's relationship, respectively. A further step, the influence of oxygen partial pressure on optical properties is explained by theoretical calculation.
| Translated title of the contribution | 氧分压对脉冲激光沉积β-Ga2O3-δ薄膜光学性能的影响 |
|---|---|
| Original language | English |
| Pages (from-to) | 279-284 |
| Number of pages | 6 |
| Journal | Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves |
| Volume | 41 |
| Issue number | 1 |
| DOIs | |
| State | Published - Feb 2022 |
Keywords
- Optical properties
- Oxygen partial pressure
- Pulsed laser deposition
- Β-GaO