Influence of high-frequency discharged-aided magnetron sputtering deposition and argon pressure on structure and magnetic properties of Co/Cu multilayer film

  • Hui Wang*
  • , Qingyuan Jin
  • , Chen Chu
  • , Xinmin Xu
  • , Zhongjing Xing
  • , Yuanhua Shen
  • , Fuming Li
  • *Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

The argon pressure during magnetron sputtering deposition can significantly affect the film morphology, especially for ultrathin multilayer film. With the aid of high-frequency discharge, the argon pressure can be reduced by one order of magnitude during sputtering. The Co/Cu multilayer film prepared at 0.3 Pa was proved to have well-defined sharp interface and good periodical multilayered structure by the low angle X-ray diffraction patterns and the existence of great magnetoresistance.

Original languageEnglish
Pages (from-to)326-329
Number of pages4
JournalZhenkong Kexue yu Jishu Xuebao/Journal of Vacuum Science and Technology
Volume17
Issue number5
StatePublished - Sep 1997
Externally publishedYes

Fingerprint

Dive into the research topics of 'Influence of high-frequency discharged-aided magnetron sputtering deposition and argon pressure on structure and magnetic properties of Co/Cu multilayer film'. Together they form a unique fingerprint.

Cite this