TY - JOUR
T1 - Influence of Eu doping on structural and optical properties of BiFeO3 films deposited on quartz substrates by pulsed laser deposition method
AU - Liu, Jian
AU - Deng, Hongmei
AU - Zhai, Xuezhen
AU - Cao, Huiyi
AU - Yang, Pingxiong
AU - Chu, Junhao
N1 - Publisher Copyright:
© 2015, Springer Science+Business Media New York.
PY - 2015/5/1
Y1 - 2015/5/1
N2 - The Bi1−xEuxFeO3 (B1−xExFO, x = 0, 0.03, 0.05, 0.07) films were grown on quartz substrates by pulsed laser deposition. X-ray diffraction analysis indicates the B1−xExFO films exhibit the distorted rhombohedral perovskite structure, and the substitution of Eu into the Bi site. Atomic force microscopy and scanning electron microscopy show that the B1−xExFO films are smooth and uniform. With increasing Eu content, the fundamental absorption edges of B1−xExFO films show red shift. At the wavelength of 720 nm, the refractive index increases and the extinction coefficient decreases with increasing the amount of Eu. The band gap of the B1−xExFO films decreases from 2.694 ± 0.007 to 2.501 ± 0.005 eV with increasing Eu content from x = 0 to x = 0.07, which provides potential application for optoelectronic and photovoltaic devices due to the enhanced photovoltaic conversion ability.
AB - The Bi1−xEuxFeO3 (B1−xExFO, x = 0, 0.03, 0.05, 0.07) films were grown on quartz substrates by pulsed laser deposition. X-ray diffraction analysis indicates the B1−xExFO films exhibit the distorted rhombohedral perovskite structure, and the substitution of Eu into the Bi site. Atomic force microscopy and scanning electron microscopy show that the B1−xExFO films are smooth and uniform. With increasing Eu content, the fundamental absorption edges of B1−xExFO films show red shift. At the wavelength of 720 nm, the refractive index increases and the extinction coefficient decreases with increasing the amount of Eu. The band gap of the B1−xExFO films decreases from 2.694 ± 0.007 to 2.501 ± 0.005 eV with increasing Eu content from x = 0 to x = 0.07, which provides potential application for optoelectronic and photovoltaic devices due to the enhanced photovoltaic conversion ability.
UR - https://www.scopus.com/pages/publications/84939935342
U2 - 10.1007/s10854-015-2785-x
DO - 10.1007/s10854-015-2785-x
M3 - 文章
AN - SCOPUS:84939935342
SN - 0957-4522
VL - 26
SP - 2977
EP - 2981
JO - Journal of Materials Science: Materials in Electronics
JF - Journal of Materials Science: Materials in Electronics
IS - 5
ER -