Abstract
The Bi1−xEuxFeO3 (B1−xExFO, x = 0, 0.03, 0.05, 0.07) films were grown on quartz substrates by pulsed laser deposition. X-ray diffraction analysis indicates the B1−xExFO films exhibit the distorted rhombohedral perovskite structure, and the substitution of Eu into the Bi site. Atomic force microscopy and scanning electron microscopy show that the B1−xExFO films are smooth and uniform. With increasing Eu content, the fundamental absorption edges of B1−xExFO films show red shift. At the wavelength of 720 nm, the refractive index increases and the extinction coefficient decreases with increasing the amount of Eu. The band gap of the B1−xExFO films decreases from 2.694 ± 0.007 to 2.501 ± 0.005 eV with increasing Eu content from x = 0 to x = 0.07, which provides potential application for optoelectronic and photovoltaic devices due to the enhanced photovoltaic conversion ability.
| Original language | English |
|---|---|
| Pages (from-to) | 2977-2981 |
| Number of pages | 5 |
| Journal | Journal of Materials Science: Materials in Electronics |
| Volume | 26 |
| Issue number | 5 |
| DOIs | |
| State | Published - 1 May 2015 |
UN SDGs
This output contributes to the following UN Sustainable Development Goals (SDGs)
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SDG 7 Affordable and Clean Energy
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