Influence of doping for InSb on ultrafast carrier dynamics measured by time-resolved terahertz spectroscopy

Gaofang Li; Xiaobo Nie; Wei Zhou; Wenjie Zhang; Haoyang Cui; Nenghong Xia; Zhiming Huang; Junhao Chu; Guohong Ma

doi:10.1364/AO.411259

Influence of doping for InSb on ultrafast carrier dynamics measured by time-resolved terahertz spectroscopy

Gaofang Li, Xiaobo Nie, Wei Zhou, Wenjie Zhang, Haoyang Cui, Nenghong Xia, Zhiming Huang, Junhao Chu, Guohong Ma

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

The influence of doping on the ultrafast carrier dynamics in InSb has been studied by time-resolved terahertz spectroscopy with photogenerated carrier densities from 1.5 × 10¹⁸ to 9.5 × 10¹⁹ cm⁻³ at 800 nm. The photoinduced absorption and carrier recovery process show doping type dependence. The carrier recovery time of intrinsic InSb is greater than that of p-doped InSb but less than that of n-doped InSb at low carrier densities. At high carrier densities, compared with intrinsic InSb, the doped InSb is more prone to transient Auger recombination, which indicates that the appearance of the fast decay process depends on the carrier densities. The photoinduced absorption of terahertz probe pulse of n-doped InSb is significantly less than that of p-doped and intrinsic InSb; however, that of p-doped InSb is close to that of intrinsic InSb, which demonstrates that the high concentration of electrons can accelerate the efficiency of transient Auger recombination. Our analysis provides assistance to the design, manufacture, and improvement of photovoltaic detectors.

Original language	English
Pages (from-to)	11046-11052
Number of pages	7
Journal	Applied Optics
Volume	59
Issue number	35
DOIs	https://doi.org/10.1364/AO.411259
State	Published - 10 Dec 2020
Externally published	Yes

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@article{565bd8f8891441e08c1f3078690f6666,

title = "Influence of doping for InSb on ultrafast carrier dynamics measured by time-resolved terahertz spectroscopy",

abstract = "The influence of doping on the ultrafast carrier dynamics in InSb has been studied by time-resolved terahertz spectroscopy with photogenerated carrier densities from 1.5 × 1018 to 9.5 × 1019 cm−3 at 800 nm. The photoinduced absorption and carrier recovery process show doping type dependence. The carrier recovery time of intrinsic InSb is greater than that of p-doped InSb but less than that of n-doped InSb at low carrier densities. At high carrier densities, compared with intrinsic InSb, the doped InSb is more prone to transient Auger recombination, which indicates that the appearance of the fast decay process depends on the carrier densities. The photoinduced absorption of terahertz probe pulse of n-doped InSb is significantly less than that of p-doped and intrinsic InSb; however, that of p-doped InSb is close to that of intrinsic InSb, which demonstrates that the high concentration of electrons can accelerate the efficiency of transient Auger recombination. Our analysis provides assistance to the design, manufacture, and improvement of photovoltaic detectors.",

author = "Gaofang Li and Xiaobo Nie and Wei Zhou and Wenjie Zhang and Haoyang Cui and Nenghong Xia and Zhiming Huang and Junhao Chu and Guohong Ma",

note = "Publisher Copyright: {\textcopyright} 2020 Optical Society of America",

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doi = "10.1364/AO.411259",

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T1 - Influence of doping for InSb on ultrafast carrier dynamics measured by time-resolved terahertz spectroscopy

AU - Li, Gaofang

AU - Nie, Xiaobo

AU - Zhou, Wei

AU - Zhang, Wenjie

AU - Cui, Haoyang

AU - Xia, Nenghong

AU - Huang, Zhiming

AU - Chu, Junhao

AU - Ma, Guohong

PY - 2020/12/10

Y1 - 2020/12/10

N2 - The influence of doping on the ultrafast carrier dynamics in InSb has been studied by time-resolved terahertz spectroscopy with photogenerated carrier densities from 1.5 × 1018 to 9.5 × 1019 cm−3 at 800 nm. The photoinduced absorption and carrier recovery process show doping type dependence. The carrier recovery time of intrinsic InSb is greater than that of p-doped InSb but less than that of n-doped InSb at low carrier densities. At high carrier densities, compared with intrinsic InSb, the doped InSb is more prone to transient Auger recombination, which indicates that the appearance of the fast decay process depends on the carrier densities. The photoinduced absorption of terahertz probe pulse of n-doped InSb is significantly less than that of p-doped and intrinsic InSb; however, that of p-doped InSb is close to that of intrinsic InSb, which demonstrates that the high concentration of electrons can accelerate the efficiency of transient Auger recombination. Our analysis provides assistance to the design, manufacture, and improvement of photovoltaic detectors.

AB - The influence of doping on the ultrafast carrier dynamics in InSb has been studied by time-resolved terahertz spectroscopy with photogenerated carrier densities from 1.5 × 1018 to 9.5 × 1019 cm−3 at 800 nm. The photoinduced absorption and carrier recovery process show doping type dependence. The carrier recovery time of intrinsic InSb is greater than that of p-doped InSb but less than that of n-doped InSb at low carrier densities. At high carrier densities, compared with intrinsic InSb, the doped InSb is more prone to transient Auger recombination, which indicates that the appearance of the fast decay process depends on the carrier densities. The photoinduced absorption of terahertz probe pulse of n-doped InSb is significantly less than that of p-doped and intrinsic InSb; however, that of p-doped InSb is close to that of intrinsic InSb, which demonstrates that the high concentration of electrons can accelerate the efficiency of transient Auger recombination. Our analysis provides assistance to the design, manufacture, and improvement of photovoltaic detectors.

UR - https://www.scopus.com/pages/publications/85097622817

U2 - 10.1364/AO.411259

DO - 10.1364/AO.411259

M3 - 文章

C2 - 33361930

AN - SCOPUS:85097622817

SN - 1559-128X

VL - 59

SP - 11046

EP - 11052

JO - Applied Optics

JF - Applied Optics

IS - 35

ER -

Influence of doping for InSb on ultrafast carrier dynamics measured by time-resolved terahertz spectroscopy

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