Influence of deposition pressure on the structural, optical and electrical properties of Sb2Se3 thin films grown by RF magnetron sputtering

F. E.I. Zhao; Jiahua Tao; Yixin Guo; Chuanhe Ma; Jinchun Jiang; Junhao Chu

Influence of deposition pressure on the structural, optical and electrical properties of Sb₂Se₃ thin films grown by RF magnetron sputtering

F. E.I. Zhao, Jiahua Tao, Yixin Guo, Chuanhe Ma, Jinchun Jiang, Junhao Chu

School of Physics and Electronic Science

Research output: Contribution to journal › Article › peer-review

Abstract

In this paper, Sb₂Se₃ thin films were deposited on quartz substrates by radio frequency (RF) magnetron sputtering at different deposition pressures. The structural, optical and electrical properties of the Sb₂Se₃ films were investigated by XRD, Raman, XPS, SEM, Hall Effect and UV-Vis measurements. With optimized deposition pressure of 0.5 Pa, the fabricated Sb 2Se3 film has the highest crystallinity, the most stable valence of Se^2- and Sb³⁺, the maximum mobility (21.54 cm² V^-1 s^-1) and the suitable optical band gap (1.33 eV). This study provides a guideline to prepare Sb₂Se₃ film for photovoltaics.

Original language	English
Pages (from-to)	359-363
Number of pages	5
Journal	Optoelectronics and Advanced Materials, Rapid Communications
Volume	13
Issue number	5-6
State	Published - 2019

Keywords

Crystallinity
Electrical mobility
Magnetron sputtering
Optical band gap
SbSe thin films

Cite this

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title = "Influence of deposition pressure on the structural, optical and electrical properties of Sb2Se3 thin films grown by RF magnetron sputtering",

abstract = "In this paper, Sb2Se3 thin films were deposited on quartz substrates by radio frequency (RF) magnetron sputtering at different deposition pressures. The structural, optical and electrical properties of the Sb2Se3 films were investigated by XRD, Raman, XPS, SEM, Hall Effect and UV-Vis measurements. With optimized deposition pressure of 0.5 Pa, the fabricated Sb 2Se3 film has the highest crystallinity, the most stable valence of Se2- and Sb3+, the maximum mobility (21.54 cm2 V-1 s-1) and the suitable optical band gap (1.33 eV). This study provides a guideline to prepare Sb2Se3 film for photovoltaics.",

keywords = "Crystallinity, Electrical mobility, Magnetron sputtering, Optical band gap, SbSe thin films",

author = "Zhao, \{F. E.I.\} and Jiahua Tao and Yixin Guo and Chuanhe Ma and Jinchun Jiang and Junhao Chu",

year = "2019",

language = "英语",

volume = "13",

pages = "359--363",

journal = "Optoelectronics and Advanced Materials, Rapid Communications",

issn = "1842-6573",

publisher = "National Institute of Optoelectronics",

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TY - JOUR

T1 - Influence of deposition pressure on the structural, optical and electrical properties of Sb2Se3 thin films grown by RF magnetron sputtering

AU - Zhao, F. E.I.

AU - Tao, Jiahua

AU - Guo, Yixin

AU - Ma, Chuanhe

AU - Jiang, Jinchun

AU - Chu, Junhao

PY - 2019

Y1 - 2019

N2 - In this paper, Sb2Se3 thin films were deposited on quartz substrates by radio frequency (RF) magnetron sputtering at different deposition pressures. The structural, optical and electrical properties of the Sb2Se3 films were investigated by XRD, Raman, XPS, SEM, Hall Effect and UV-Vis measurements. With optimized deposition pressure of 0.5 Pa, the fabricated Sb 2Se3 film has the highest crystallinity, the most stable valence of Se2- and Sb3+, the maximum mobility (21.54 cm2 V-1 s-1) and the suitable optical band gap (1.33 eV). This study provides a guideline to prepare Sb2Se3 film for photovoltaics.

AB - In this paper, Sb2Se3 thin films were deposited on quartz substrates by radio frequency (RF) magnetron sputtering at different deposition pressures. The structural, optical and electrical properties of the Sb2Se3 films were investigated by XRD, Raman, XPS, SEM, Hall Effect and UV-Vis measurements. With optimized deposition pressure of 0.5 Pa, the fabricated Sb 2Se3 film has the highest crystallinity, the most stable valence of Se2- and Sb3+, the maximum mobility (21.54 cm2 V-1 s-1) and the suitable optical band gap (1.33 eV). This study provides a guideline to prepare Sb2Se3 film for photovoltaics.

KW - Crystallinity

KW - Electrical mobility

KW - Magnetron sputtering

KW - Optical band gap

KW - SbSe thin films

UR - https://www.scopus.com/pages/publications/85070439239

M3 - 文章

AN - SCOPUS:85070439239

SN - 1842-6573

VL - 13

SP - 359

EP - 363

JO - Optoelectronics and Advanced Materials, Rapid Communications

JF - Optoelectronics and Advanced Materials, Rapid Communications

IS - 5-6

ER -

Influence of deposition pressure on the structural, optical and electrical properties of Sb₂Se₃ thin films grown by RF magnetron sputtering

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Keywords

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