Influence of deep levels on the performance of AlGaInP/GaAs heterojunction bipolar transistor

Xing Hong Zhang; Yu Sheng Hu; Jie Wu; Zhi Qun Cheng; Guan Qun Xia; Yuan Sen Xu; Zhang Hai Chen; Yong Sheng Gui; Jun Hao Chu

Influence of deep levels on the performance of AlGaInP/GaAs heterojunction bipolar transistor

Xing Hong Zhang^*
, Yu Sheng Hu
, Jie Wu
, Zhi Qun Cheng
, Guan Qun Xia
, Yuan Sen Xu
, Zhang Hai Chen
, Yong Sheng Gui
, Jun Hao Chu

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

We have studied deep levels in AlGaInP emitter of AlGaInP/GaAs heterojunction bipolar transistor by deep-level transient spectroscopy and photoluminescence (PL) methods. Two deep levels were obtained with thermal activation energies of E_c - E_t1 = 0.42 eV and E_c - E_t2 = 0.59 eV, whose capture cross sections are 6.27 × 10^-20 cm² and 6.49 × 10^-20 cm², where E_t1 and E_t2 are Si-related and O-related deep levels, respectively. The relationship between excitation power and PL peak intensity have revealed that nonradiative recombination centers of deep levels exist in AlGaInP. The current gain of AlGaInP/GaAs HBT decreases due to the existence of deep levels in AlGaInP.

Original language	English
Pages (from-to)	560
Number of pages	1
Journal	Wuli Xuebao/Acta Physica Sinica
Volume	48
Issue number	3
State	Published - Mar 1999
Externally published	Yes

Cite this

@article{8d528f0edcec4f77aab394dba66c667f,

title = "Influence of deep levels on the performance of AlGaInP/GaAs heterojunction bipolar transistor",

abstract = "We have studied deep levels in AlGaInP emitter of AlGaInP/GaAs heterojunction bipolar transistor by deep-level transient spectroscopy and photoluminescence (PL) methods. Two deep levels were obtained with thermal activation energies of Ec - Et1 = 0.42 eV and Ec - Et2 = 0.59 eV, whose capture cross sections are 6.27 × 10-20 cm2 and 6.49 × 10-20 cm2, where Et1 and Et2 are Si-related and O-related deep levels, respectively. The relationship between excitation power and PL peak intensity have revealed that nonradiative recombination centers of deep levels exist in AlGaInP. The current gain of AlGaInP/GaAs HBT decreases due to the existence of deep levels in AlGaInP.",

author = "Zhang, \{Xing Hong\} and Hu, \{Yu Sheng\} and Jie Wu and Cheng, \{Zhi Qun\} and Xia, \{Guan Qun\} and Xu, \{Yuan Sen\} and Chen, \{Zhang Hai\} and Gui, \{Yong Sheng\} and Chu, \{Jun Hao\}",

year = "1999",

month = mar,

language = "英语",

volume = "48",

pages = "560",

journal = "Wuli Xuebao/Acta Physica Sinica",

issn = "1000-3290",

publisher = "Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences",

number = "3",

}

TY - JOUR

T1 - Influence of deep levels on the performance of AlGaInP/GaAs heterojunction bipolar transistor

AU - Zhang, Xing Hong

AU - Hu, Yu Sheng

AU - Wu, Jie

AU - Cheng, Zhi Qun

AU - Xia, Guan Qun

AU - Xu, Yuan Sen

AU - Chen, Zhang Hai

AU - Gui, Yong Sheng

AU - Chu, Jun Hao

PY - 1999/3

Y1 - 1999/3

N2 - We have studied deep levels in AlGaInP emitter of AlGaInP/GaAs heterojunction bipolar transistor by deep-level transient spectroscopy and photoluminescence (PL) methods. Two deep levels were obtained with thermal activation energies of Ec - Et1 = 0.42 eV and Ec - Et2 = 0.59 eV, whose capture cross sections are 6.27 × 10-20 cm2 and 6.49 × 10-20 cm2, where Et1 and Et2 are Si-related and O-related deep levels, respectively. The relationship between excitation power and PL peak intensity have revealed that nonradiative recombination centers of deep levels exist in AlGaInP. The current gain of AlGaInP/GaAs HBT decreases due to the existence of deep levels in AlGaInP.

AB - We have studied deep levels in AlGaInP emitter of AlGaInP/GaAs heterojunction bipolar transistor by deep-level transient spectroscopy and photoluminescence (PL) methods. Two deep levels were obtained with thermal activation energies of Ec - Et1 = 0.42 eV and Ec - Et2 = 0.59 eV, whose capture cross sections are 6.27 × 10-20 cm2 and 6.49 × 10-20 cm2, where Et1 and Et2 are Si-related and O-related deep levels, respectively. The relationship between excitation power and PL peak intensity have revealed that nonradiative recombination centers of deep levels exist in AlGaInP. The current gain of AlGaInP/GaAs HBT decreases due to the existence of deep levels in AlGaInP.

UR - https://www.scopus.com/pages/publications/0042763232

M3 - 文章

AN - SCOPUS:0042763232

SN - 1000-3290

VL - 48

SP - 560

JO - Wuli Xuebao/Acta Physica Sinica

JF - Wuli Xuebao/Acta Physica Sinica

IS - 3

ER -

Influence of deep levels on the performance of AlGaInP/GaAs heterojunction bipolar transistor

Abstract

Other files and links

Fingerprint

Cite this