Influence of CsPbBr3/TiO2 interfaces deposited with magnetron sputtering and spin-coating methods on the open voltage deficit and efficiency of all-inorganic CsPbBr3 planar solar cells

Fei Zhao; Yixin Guo; Xiang Wang; Jun Zhou; Jiahua Tao; Dongliang Zheng; Jinchun Jiang; Zhigao Hu; Junhao Chu

doi:10.1016/j.jallcom.2020.157900

Influence of CsPbBr₃/TiO₂ interfaces deposited with magnetron sputtering and spin-coating methods on the open voltage deficit and efficiency of all-inorganic CsPbBr₃ planar solar cells

Fei Zhao
, Yixin Guo
, Xiang Wang
, Jun Zhou
, Jiahua Tao
, Dongliang Zheng
, Jinchun Jiang^*
, Zhigao Hu
, Junhao Chu

^*Corresponding author for this work

School of Physics and Electronic Science

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

The mechanism of open voltage (V_oc) deficit in all-inorganic CsPbBr₃ planar solar cell has been systematically investigated by depositing the TiO₂ electron transport layer with magnetron sputtering (MS) and spin-coating (SC) deposition, respectively. It was found that SC-TiO₂ film reveals higher optical band gap (3.67 eV) than MS-TiO₂ film (3.62 eV). However, CsPbBr₃ planar solar cell based on MS-TiO₂ exhibits less V_oc deficit and higher photoelectric conversion efficiency (5.48%). The mechanism behind performance enhancement of MS-TiO₂-based device is suitable Fermi level of MS-TiO₂ and high electronic transport capacity with low charge recombination at CsPbBr₃/MS-TiO₂ interface. Moreover, the unencapsulated all-inorganic planar devices show a superior stability when stored in air at room temperature for two months. This work provides a novel approach to improve the performance of all-inorganic perovskite solar cell.

Original language	English
Article number	157900
Journal	Journal of Alloys and Compounds
Volume	860
DOIs	https://doi.org/10.1016/j.jallcom.2020.157900
State	Published - 15 Apr 2021

Keywords

CsPbBr planar solar cells
Magnetron sputtering method
Open voltage deficit
Spin-coating methods
TiO

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10.1016/j.jallcom.2020.157900

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Zhao, F., Guo, Y., Wang, X., Zhou, J., Tao, J., Zheng, D., Jiang, J., Hu, Z., & Chu, J. (2021). Influence of CsPbBr₃/TiO₂ interfaces deposited with magnetron sputtering and spin-coating methods on the open voltage deficit and efficiency of all-inorganic CsPbBr₃ planar solar cells. Journal of Alloys and Compounds, 860, Article 157900. https://doi.org/10.1016/j.jallcom.2020.157900

@article{490663f5a3764aa3869420286b14d9b4,

title = "Influence of CsPbBr3/TiO2 interfaces deposited with magnetron sputtering and spin-coating methods on the open voltage deficit and efficiency of all-inorganic CsPbBr3 planar solar cells",

abstract = "The mechanism of open voltage (Voc) deficit in all-inorganic CsPbBr3 planar solar cell has been systematically investigated by depositing the TiO2 electron transport layer with magnetron sputtering (MS) and spin-coating (SC) deposition, respectively. It was found that SC-TiO2 film reveals higher optical band gap (3.67 eV) than MS-TiO2 film (3.62 eV). However, CsPbBr3 planar solar cell based on MS-TiO2 exhibits less Voc deficit and higher photoelectric conversion efficiency (5.48\%). The mechanism behind performance enhancement of MS-TiO2-based device is suitable Fermi level of MS-TiO2 and high electronic transport capacity with low charge recombination at CsPbBr3/MS-TiO2 interface. Moreover, the unencapsulated all-inorganic planar devices show a superior stability when stored in air at room temperature for two months. This work provides a novel approach to improve the performance of all-inorganic perovskite solar cell.",

keywords = "CsPbBr planar solar cells, Magnetron sputtering method, Open voltage deficit, Spin-coating methods, TiO",

author = "Fei Zhao and Yixin Guo and Xiang Wang and Jun Zhou and Jiahua Tao and Dongliang Zheng and Jinchun Jiang and Zhigao Hu and Junhao Chu",

note = "Publisher Copyright: {\textcopyright} 2020 Elsevier B.V.",

year = "2021",

month = apr,

day = "15",

doi = "10.1016/j.jallcom.2020.157900",

language = "英语",

volume = "860",

journal = "Journal of Alloys and Compounds",

issn = "0925-8388",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Influence of CsPbBr3/TiO2 interfaces deposited with magnetron sputtering and spin-coating methods on the open voltage deficit and efficiency of all-inorganic CsPbBr3 planar solar cells

AU - Zhao, Fei

AU - Guo, Yixin

AU - Wang, Xiang

AU - Zhou, Jun

AU - Tao, Jiahua

AU - Zheng, Dongliang

AU - Jiang, Jinchun

AU - Hu, Zhigao

AU - Chu, Junhao

PY - 2021/4/15

Y1 - 2021/4/15

N2 - The mechanism of open voltage (Voc) deficit in all-inorganic CsPbBr3 planar solar cell has been systematically investigated by depositing the TiO2 electron transport layer with magnetron sputtering (MS) and spin-coating (SC) deposition, respectively. It was found that SC-TiO2 film reveals higher optical band gap (3.67 eV) than MS-TiO2 film (3.62 eV). However, CsPbBr3 planar solar cell based on MS-TiO2 exhibits less Voc deficit and higher photoelectric conversion efficiency (5.48%). The mechanism behind performance enhancement of MS-TiO2-based device is suitable Fermi level of MS-TiO2 and high electronic transport capacity with low charge recombination at CsPbBr3/MS-TiO2 interface. Moreover, the unencapsulated all-inorganic planar devices show a superior stability when stored in air at room temperature for two months. This work provides a novel approach to improve the performance of all-inorganic perovskite solar cell.

AB - The mechanism of open voltage (Voc) deficit in all-inorganic CsPbBr3 planar solar cell has been systematically investigated by depositing the TiO2 electron transport layer with magnetron sputtering (MS) and spin-coating (SC) deposition, respectively. It was found that SC-TiO2 film reveals higher optical band gap (3.67 eV) than MS-TiO2 film (3.62 eV). However, CsPbBr3 planar solar cell based on MS-TiO2 exhibits less Voc deficit and higher photoelectric conversion efficiency (5.48%). The mechanism behind performance enhancement of MS-TiO2-based device is suitable Fermi level of MS-TiO2 and high electronic transport capacity with low charge recombination at CsPbBr3/MS-TiO2 interface. Moreover, the unencapsulated all-inorganic planar devices show a superior stability when stored in air at room temperature for two months. This work provides a novel approach to improve the performance of all-inorganic perovskite solar cell.

KW - CsPbBr planar solar cells

KW - Magnetron sputtering method

KW - Open voltage deficit

KW - Spin-coating methods

KW - TiO

UR - https://www.scopus.com/pages/publications/85096472602

U2 - 10.1016/j.jallcom.2020.157900

DO - 10.1016/j.jallcom.2020.157900

M3 - 文章

AN - SCOPUS:85096472602

SN - 0925-8388

VL - 860

JO - Journal of Alloys and Compounds

JF - Journal of Alloys and Compounds

M1 - 157900

ER -

Influence of CsPbBr₃/TiO₂ interfaces deposited with magnetron sputtering and spin-coating methods on the open voltage deficit and efficiency of all-inorganic CsPbBr₃ planar solar cells

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