Influence of annealing temperature on the photoluminescence properties of ZnO quantum dots

Xiangqiang Zhang; Shili Hou; Huibing Mao; Jiqing Wang; Ziqiang Zhu

doi:10.1016/j.apsusc.2010.01.041

Influence of annealing temperature on the photoluminescence properties of ZnO quantum dots

Xiangqiang Zhang, Shili Hou, Huibing Mao, Jiqing Wang, Ziqiang Zhu

School of Physics and Electronic Science

East China Normal University

Research output: Contribution to journal › Article › peer-review

23 Scopus citations

Abstract

The properties of ZnO quantum dots (QDs) synthesized by the sol-gel process are reported. The primary focus is on investigating the origin of the visible emission from ZnO QDs by the annealing process. The X-ray diffraction results show that ZnO QDs have hexagonal wurtzite structure and the QD diameter estimated from Debye-Scherrer formula is 8.9 nm, which has a good agreement with the results from transmission electron microscopy images and the theoretical calculation based on the Potential Morphing Method. The room-temperature photoluminescence spectra reveal that the ultraviolet excitation band has a red shift. Meanwhile, the main band of the visible emission shifts to the green luminescence band from the yellow luminescence one with the increase of the annealing temperature. A lot of oxygen atoms enter into Zn vacancies and form oxygen antisites with increasing temperature. That is probably the reason for the change of the visible emission band.

Original language	English
Pages (from-to)	3862-3865
Number of pages	4
Journal	Applied Surface Science
Volume	256
Issue number	12
DOIs	https://doi.org/10.1016/j.apsusc.2010.01.041
State	Published - 1 Apr 2010

Keywords

Annealing
Photoluminescence
Point defects
Quantum dots

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10.1016/j.apsusc.2010.01.041

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title = "Influence of annealing temperature on the photoluminescence properties of ZnO quantum dots",

abstract = "The properties of ZnO quantum dots (QDs) synthesized by the sol-gel process are reported. The primary focus is on investigating the origin of the visible emission from ZnO QDs by the annealing process. The X-ray diffraction results show that ZnO QDs have hexagonal wurtzite structure and the QD diameter estimated from Debye-Scherrer formula is 8.9 nm, which has a good agreement with the results from transmission electron microscopy images and the theoretical calculation based on the Potential Morphing Method. The room-temperature photoluminescence spectra reveal that the ultraviolet excitation band has a red shift. Meanwhile, the main band of the visible emission shifts to the green luminescence band from the yellow luminescence one with the increase of the annealing temperature. A lot of oxygen atoms enter into Zn vacancies and form oxygen antisites with increasing temperature. That is probably the reason for the change of the visible emission band.",

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author = "Xiangqiang Zhang and Shili Hou and Huibing Mao and Jiqing Wang and Ziqiang Zhu",

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doi = "10.1016/j.apsusc.2010.01.041",

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T1 - Influence of annealing temperature on the photoluminescence properties of ZnO quantum dots

AU - Zhang, Xiangqiang

AU - Hou, Shili

AU - Mao, Huibing

AU - Wang, Jiqing

AU - Zhu, Ziqiang

PY - 2010/4/1

Y1 - 2010/4/1

N2 - The properties of ZnO quantum dots (QDs) synthesized by the sol-gel process are reported. The primary focus is on investigating the origin of the visible emission from ZnO QDs by the annealing process. The X-ray diffraction results show that ZnO QDs have hexagonal wurtzite structure and the QD diameter estimated from Debye-Scherrer formula is 8.9 nm, which has a good agreement with the results from transmission electron microscopy images and the theoretical calculation based on the Potential Morphing Method. The room-temperature photoluminescence spectra reveal that the ultraviolet excitation band has a red shift. Meanwhile, the main band of the visible emission shifts to the green luminescence band from the yellow luminescence one with the increase of the annealing temperature. A lot of oxygen atoms enter into Zn vacancies and form oxygen antisites with increasing temperature. That is probably the reason for the change of the visible emission band.

AB - The properties of ZnO quantum dots (QDs) synthesized by the sol-gel process are reported. The primary focus is on investigating the origin of the visible emission from ZnO QDs by the annealing process. The X-ray diffraction results show that ZnO QDs have hexagonal wurtzite structure and the QD diameter estimated from Debye-Scherrer formula is 8.9 nm, which has a good agreement with the results from transmission electron microscopy images and the theoretical calculation based on the Potential Morphing Method. The room-temperature photoluminescence spectra reveal that the ultraviolet excitation band has a red shift. Meanwhile, the main band of the visible emission shifts to the green luminescence band from the yellow luminescence one with the increase of the annealing temperature. A lot of oxygen atoms enter into Zn vacancies and form oxygen antisites with increasing temperature. That is probably the reason for the change of the visible emission band.

KW - Annealing

KW - Photoluminescence

KW - Point defects

KW - Quantum dots

UR - https://www.scopus.com/pages/publications/77649238963

U2 - 10.1016/j.apsusc.2010.01.041

DO - 10.1016/j.apsusc.2010.01.041

M3 - 文章

AN - SCOPUS:77649238963

SN - 0169-4332

VL - 256

SP - 3862

EP - 3865

JO - Applied Surface Science

JF - Applied Surface Science

IS - 12

ER -

Influence of annealing temperature on the photoluminescence properties of ZnO quantum dots

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Keywords

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