Influence of annealing on formation of β-FeSi2

Xiangdong Chen; Lianwei Wang; Xian Lin; Chenglu Lin; Shichang Zou

Influence of annealing on formation of β-FeSi₂

Xiangdong Chen^*
, Lianwei Wang
, Xian Lin
, Chenglu Lin
, Shichang Zou

^*Corresponding author for this work

CAS - Shanghai Institute of Microsystem and Information Technology

Research output: Contribution to journal › Article › peer-review

Abstract

β-FeSi₂ thin film was prepared by means of reactive deposition-solid phase epitaxy. X-ray diffraction analysis shows that relatively lower temperature and long duration post-annealing process can improve the film quality. Si diffusion in β-FeSi₂ is investigated by Rutherford backscattering spectrometry, and the mechanism of β-FeSi₂ formation is discussed.

Original language	English
Pages (from-to)	794-797
Number of pages	4
Journal	Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors
Volume	16
Issue number	10
State	Published - Oct 1995
Externally published	Yes

Cite this

@article{db366ed8ab0a42668f0a46f89e14decc,

title = "Influence of annealing on formation of β-FeSi2",

abstract = "β-FeSi2 thin film was prepared by means of reactive deposition-solid phase epitaxy. X-ray diffraction analysis shows that relatively lower temperature and long duration post-annealing process can improve the film quality. Si diffusion in β-FeSi2 is investigated by Rutherford backscattering spectrometry, and the mechanism of β-FeSi2 formation is discussed.",

author = "Xiangdong Chen and Lianwei Wang and Xian Lin and Chenglu Lin and Shichang Zou",

year = "1995",

month = oct,

language = "英语",

volume = "16",

pages = "794--797",

journal = "Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors",

issn = "0253-4177",

publisher = "Kexue Chubaneshe/Science Press",

number = "10",

}

TY - JOUR

T1 - Influence of annealing on formation of β-FeSi2

AU - Chen, Xiangdong

AU - Wang, Lianwei

AU - Lin, Xian

AU - Lin, Chenglu

AU - Zou, Shichang

PY - 1995/10

Y1 - 1995/10

N2 - β-FeSi2 thin film was prepared by means of reactive deposition-solid phase epitaxy. X-ray diffraction analysis shows that relatively lower temperature and long duration post-annealing process can improve the film quality. Si diffusion in β-FeSi2 is investigated by Rutherford backscattering spectrometry, and the mechanism of β-FeSi2 formation is discussed.

AB - β-FeSi2 thin film was prepared by means of reactive deposition-solid phase epitaxy. X-ray diffraction analysis shows that relatively lower temperature and long duration post-annealing process can improve the film quality. Si diffusion in β-FeSi2 is investigated by Rutherford backscattering spectrometry, and the mechanism of β-FeSi2 formation is discussed.

UR - https://www.scopus.com/pages/publications/0029390771

M3 - 文章

AN - SCOPUS:0029390771

SN - 0253-4177

VL - 16

SP - 794

EP - 797

JO - Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

JF - Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

IS - 10

ER -

Influence of annealing on formation of β-FeSi₂

Abstract

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