Influence of annealing on crystal structure and properties of SrBi2Ta2O9 thin films prepared by pulse laser deposition

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Abstract

The perovskite-like SrBi2 Ta2O9 (SET) thin films have been fabricated on Si/SiO2/Ti/Pt substrate by pulse laser deposition. The crystallization and ferroelectric property were clearly dependent on the annealing time and temperature. The SBT thin film with fine grain size and well-saturated square hysteresis loop was obtained after annealing at 750° C for 90 min. Good ferroelectric properties were obtained from the SBT film annealed under this condition; Pr and Ec were 8.4 μC/cm2 and 57 kV/cm, respectively.

Original languageEnglish
Pages (from-to)934-936
Number of pages3
JournalChinese Physics Letters
Volume13
Issue number12
DOIs
StatePublished - 1996
Externally publishedYes

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