Abstract
The perovskite-like SrBi2 Ta2O9 (SET) thin films have been fabricated on Si/SiO2/Ti/Pt substrate by pulse laser deposition. The crystallization and ferroelectric property were clearly dependent on the annealing time and temperature. The SBT thin film with fine grain size and well-saturated square hysteresis loop was obtained after annealing at 750° C for 90 min. Good ferroelectric properties were obtained from the SBT film annealed under this condition; Pr and Ec were 8.4 μC/cm2 and 57 kV/cm, respectively.
| Original language | English |
|---|---|
| Pages (from-to) | 934-936 |
| Number of pages | 3 |
| Journal | Chinese Physics Letters |
| Volume | 13 |
| Issue number | 12 |
| DOIs | |
| State | Published - 1996 |
| Externally published | Yes |