Influence of Al composition on transport properties of two-dimensional electron gas in AlxGa1-xN/GaN heterostructures

Ning Tang; Bo Shen; Maojun Wang; Zhijian Yang; Ke Xu; Guoyi Zhang; Yongsheng Gui; Bo Zhu; Shaoling Guo; Junhao Chu

Influence of Al composition on transport properties of two-dimensional electron gas in Al_xGa_1-xN/GaN heterostructures

Ning Tang, Bo Shen, Maojun Wang, Zhijian Yang, Ke Xu, Guoyi Zhang, Yongsheng Gui, Bo Zhu, Shaoling Guo, Junhao Chu

Research output: Contribution to journal › Article › peer-review

Abstract

Magnetotransport properties of two-dimensional electron gases (2DEG) in Al_xGa_1-xN/GaN hetero-structures with different Al compositions are investigated by magnetotransport measurements at low temperatures and in high magnetic fields. It is found that heterostructures with a lower Al composition in the barrier have lower 2DEG concentration and higher 2DEG mobility.

Original language	English
Pages (from-to)	235-238
Number of pages	4
Journal	Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors
Volume	27
Issue number	2
State	Published - Feb 2006
Externally published	Yes

Keywords

AlGaN/GaN heterostructure
Transport property
Two-dimensional electron gas

Cite this

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title = "Influence of Al composition on transport properties of two-dimensional electron gas in AlxGa1-xN/GaN heterostructures",

abstract = "Magnetotransport properties of two-dimensional electron gases (2DEG) in AlxGa1-xN/GaN hetero-structures with different Al compositions are investigated by magnetotransport measurements at low temperatures and in high magnetic fields. It is found that heterostructures with a lower Al composition in the barrier have lower 2DEG concentration and higher 2DEG mobility.",

keywords = "AlGaN/GaN heterostructure, Transport property, Two-dimensional electron gas",

author = "Ning Tang and Bo Shen and Maojun Wang and Zhijian Yang and Ke Xu and Guoyi Zhang and Yongsheng Gui and Bo Zhu and Shaoling Guo and Junhao Chu",

year = "2006",

month = feb,

language = "英语",

volume = "27",

pages = "235--238",

journal = "Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors",

issn = "0253-4177",

publisher = "Kexue Chubaneshe/Science Press",

number = "2",

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TY - JOUR

T1 - Influence of Al composition on transport properties of two-dimensional electron gas in AlxGa1-xN/GaN heterostructures

AU - Tang, Ning

AU - Shen, Bo

AU - Wang, Maojun

AU - Yang, Zhijian

AU - Xu, Ke

AU - Zhang, Guoyi

AU - Gui, Yongsheng

AU - Zhu, Bo

AU - Guo, Shaoling

AU - Chu, Junhao

PY - 2006/2

Y1 - 2006/2

N2 - Magnetotransport properties of two-dimensional electron gases (2DEG) in AlxGa1-xN/GaN hetero-structures with different Al compositions are investigated by magnetotransport measurements at low temperatures and in high magnetic fields. It is found that heterostructures with a lower Al composition in the barrier have lower 2DEG concentration and higher 2DEG mobility.

AB - Magnetotransport properties of two-dimensional electron gases (2DEG) in AlxGa1-xN/GaN hetero-structures with different Al compositions are investigated by magnetotransport measurements at low temperatures and in high magnetic fields. It is found that heterostructures with a lower Al composition in the barrier have lower 2DEG concentration and higher 2DEG mobility.

KW - AlGaN/GaN heterostructure

KW - Transport property

KW - Two-dimensional electron gas

UR - https://www.scopus.com/pages/publications/33646157472

M3 - 文章

AN - SCOPUS:33646157472

SN - 0253-4177

VL - 27

SP - 235

EP - 238

JO - Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

JF - Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

IS - 2

ER -

Influence of Al composition on transport properties of two-dimensional electron gas in Al_xGa_1-xN/GaN heterostructures

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Keywords

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