Indium tin oxide films prepared by radio frequency magnetron sputtering under low vacuum level

  • X. D. Li
  • , H. B. Zhu
  • , J. B. Chu
  • , S. Y. Huang
  • , Z. Sun
  • , Y. W. Chen
  • , S. M. Huang

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We have prepared indium tin oxide (ITO) thin films using radio frequency (RF) magnetron sputtering and under a quite low vacuum level of 2.3 × 10-3 Pa. The sputtering was done in an Ar and O2 gas mixture at a temperature of 200 °C. A ceramic ln2O3 : SnO2 target (10 wt% SnO2) was used. The microstructures of the films were investigated by a field emission scanning electron microscope (FESEM) and an X-ray diffractometer (XRD). X-ray photoelectron spectroscopy (XPS) was performed to characterize the compositions of the films. ITO films with a high transparency in the visible wavelength range (80% -95% ) were obtained. At a low working pressure ( 1 Pa), the more highly transparent and conductive films were produced at the lower O2 flow ratio. At a high working pressure (2 Pa), low quality, low transparency and amorphous films were obtained.

Original languageEnglish
Title of host publicationAD'07 - Proceedings of Asia Display 2007
Pages1844-1848
Number of pages5
StatePublished - 2007
Externally publishedYes
EventAsia Display 2007, AD'07 - Shanghai, China
Duration: 12 Mar 200716 Mar 2007

Publication series

NameAD'07 - Proceedings of Asia Display 2007
Volume2

Conference

ConferenceAsia Display 2007, AD'07
Country/TerritoryChina
CityShanghai
Period12/03/0716/03/07

Keywords

  • Indium tin oxide
  • Radio frequency magnetron sputtering
  • Thin film
  • X-ray photoelectron spectroscopy

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