Incorporation sites and luminescence characterizations of Er-doped GaN grown by molecular beam epitaxy

Shaoqiang Chen; Jongwon Seo; Junji Sawahata; Katsuhiro Akimoto

doi:10.1016/j.jcrysgro.2008.12.007

Incorporation sites and luminescence characterizations of Er-doped GaN grown by molecular beam epitaxy

Shaoqiang Chen^*
, Jongwon Seo
, Junji Sawahata
, Katsuhiro Akimoto

^*Corresponding author for this work

University of Tsukuba

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

The relationship between optical and structural properties of Er-doped GaN grown by molecular beam epitaxy on sapphire (0 0 0 1) substrates was studied. The Er-related luminescence with wavelength at around 558 nm originated from ⁴S_3/2 to ⁴I_15/2 transition was observed. The intensity of the Er-related luminescence increased abruptly with the Er concentration of about 2 at% and showed a maximum at about 4 at%. X-ray diffraction analyses and Rutherford backscattering measurements suggested that most of the Er ions are incorporated into substitutional lattice site with the Er concentration of up to 2 at%, and then begin to occupy interstitial sites. The incorporation site of Er was found to be dependent on the Er concentration. Based on these results, the optically active center of Er in GaN is discussed.

Original language	English
Pages (from-to)	2042-2045
Number of pages	4
Journal	Journal of Crystal Growth
Volume	311
Issue number	7
DOIs	https://doi.org/10.1016/j.jcrysgro.2008.12.007
State	Published - 15 Mar 2009
Externally published	Yes

Keywords

A1. Doping
A2. Single-crystal growth
A3. Molecular beam epitaxy
B1. Nitrides
B1. Rare-earth compounds
B2. Semiconducting III-V materials

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10.1016/j.jcrysgro.2008.12.007

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title = "Incorporation sites and luminescence characterizations of Er-doped GaN grown by molecular beam epitaxy",

abstract = "The relationship between optical and structural properties of Er-doped GaN grown by molecular beam epitaxy on sapphire (0 0 0 1) substrates was studied. The Er-related luminescence with wavelength at around 558 nm originated from 4S3/2 to 4I15/2 transition was observed. The intensity of the Er-related luminescence increased abruptly with the Er concentration of about 2 at\% and showed a maximum at about 4 at\%. X-ray diffraction analyses and Rutherford backscattering measurements suggested that most of the Er ions are incorporated into substitutional lattice site with the Er concentration of up to 2 at\%, and then begin to occupy interstitial sites. The incorporation site of Er was found to be dependent on the Er concentration. Based on these results, the optically active center of Er in GaN is discussed.",

keywords = "A1. Doping, A2. Single-crystal growth, A3. Molecular beam epitaxy, B1. Nitrides, B1. Rare-earth compounds, B2. Semiconducting III-V materials",

author = "Shaoqiang Chen and Jongwon Seo and Junji Sawahata and Katsuhiro Akimoto",

year = "2009",

month = mar,

day = "15",

doi = "10.1016/j.jcrysgro.2008.12.007",

language = "英语",

volume = "311",

pages = "2042--2045",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

number = "7",

}

TY - JOUR

T1 - Incorporation sites and luminescence characterizations of Er-doped GaN grown by molecular beam epitaxy

AU - Chen, Shaoqiang

AU - Seo, Jongwon

AU - Sawahata, Junji

AU - Akimoto, Katsuhiro

PY - 2009/3/15

Y1 - 2009/3/15

N2 - The relationship between optical and structural properties of Er-doped GaN grown by molecular beam epitaxy on sapphire (0 0 0 1) substrates was studied. The Er-related luminescence with wavelength at around 558 nm originated from 4S3/2 to 4I15/2 transition was observed. The intensity of the Er-related luminescence increased abruptly with the Er concentration of about 2 at% and showed a maximum at about 4 at%. X-ray diffraction analyses and Rutherford backscattering measurements suggested that most of the Er ions are incorporated into substitutional lattice site with the Er concentration of up to 2 at%, and then begin to occupy interstitial sites. The incorporation site of Er was found to be dependent on the Er concentration. Based on these results, the optically active center of Er in GaN is discussed.

AB - The relationship between optical and structural properties of Er-doped GaN grown by molecular beam epitaxy on sapphire (0 0 0 1) substrates was studied. The Er-related luminescence with wavelength at around 558 nm originated from 4S3/2 to 4I15/2 transition was observed. The intensity of the Er-related luminescence increased abruptly with the Er concentration of about 2 at% and showed a maximum at about 4 at%. X-ray diffraction analyses and Rutherford backscattering measurements suggested that most of the Er ions are incorporated into substitutional lattice site with the Er concentration of up to 2 at%, and then begin to occupy interstitial sites. The incorporation site of Er was found to be dependent on the Er concentration. Based on these results, the optically active center of Er in GaN is discussed.

KW - A1. Doping

KW - A2. Single-crystal growth

KW - A3. Molecular beam epitaxy

KW - B1. Nitrides

KW - B1. Rare-earth compounds

KW - B2. Semiconducting III-V materials

UR - https://www.scopus.com/pages/publications/63349084976

U2 - 10.1016/j.jcrysgro.2008.12.007

DO - 10.1016/j.jcrysgro.2008.12.007

M3 - 文章

AN - SCOPUS:63349084976

SN - 0022-0248

VL - 311

SP - 2042

EP - 2045

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 7

ER -

Incorporation sites and luminescence characterizations of Er-doped GaN grown by molecular beam epitaxy

Abstract

Keywords

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