In-situ TEM observation of IMC evolution at atomic scale

  • Chaolun Wang
  • , Xing Wu*
  • *Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The formation mechanism of Cu-Al IMC is critical to control the contact quality of interconnections between Al bond pads and Cu wires. The in-situ TEM is a powerful tool to analyze the phase evolution and defects formation of IMC in real time. TEM images reveals that the amount of IMC increases with raising of annealing temperature and duration of time. Energy dispersive spectrometer (EDX) and high resolution TEM (HRTEM) demonstrate that the IMC is composed of CuAl2, CuAl, and Cu9Al4.

Original languageEnglish
Title of host publicationChina Semiconductor Technology International Conference 2017, CSTIC 2017
EditorsSteve Liang, Ying Shi, Ru Huang, Qinghuang Lin, David Huang, Hanming Wu, Yuchun Wang, Cor Claeys, Kafai Lai, Ying Zhang, Peilin Song, Viyu Shi, Zhen Guo
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781509066940
DOIs
StatePublished - 4 May 2017
Event2017 China Semiconductor Technology International Conference, CSTIC 2017 - Shanghai, China
Duration: 12 Mar 201713 Mar 2017

Publication series

NameChina Semiconductor Technology International Conference 2017, CSTIC 2017

Conference

Conference2017 China Semiconductor Technology International Conference, CSTIC 2017
Country/TerritoryChina
CityShanghai
Period12/03/1713/03/17

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