In situ reduction and nitrification method for the synthesis of Ga and GaN quantum dots in the channels of mesoporous silicon materials

A novel and facile method for the synthesis of Ga and GaN quantum dots in the channels of mesoporous silicon materials, designated as an in situ and low-temperature nitrification method, is described. In this method, the Si-H functional groups were directly introduced into the channels of SBA-15 mesoporous materials resulting in highly dispersed Ga nanoparticles on the pore walls of the matrix, which can be nitrified easily under relatively lower temperature.