In-situ Raman scattering study of nitrogen doped GeTe phase-change films

  • Shuang Guo*
  • , Jinzhong Zhang
  • , Yunfeng Wang
  • *Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

The N doping effect on the phase-change mechanism, as well as the chemical bonds evolution during crystallization process of nitrogen (N) doped GeTe (Nx(GeTe)1-x) have been investigated by in situ temperature-dependent Raman scattering experiments. The phase-change mechanism of Nx(GeTe)1-x and N doping effect have been discussed in detail by analysing the transformation of Raman vibration modes between amorphous and crystalline structures. The fraction of the tetrahedral species changes in such a way, namely Te-rich tetrahedra are being formed at the cost of Ge-rich tetrahedra during the phase-change process. Besides, the aforementioned structural rearrangements have taken place even in amorphous phase (below crystallization temperatures).

Original languageEnglish
Article number133994
JournalMaterials Letters
Volume337
DOIs
StatePublished - 15 Apr 2023
Externally publishedYes

Keywords

  • Chemical bonds evolution
  • Crystal structure
  • Nitrogen doped GeTe
  • Phase-change mechanism
  • Raman

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