In Situ Localization Techniques of Defects in Advanced Semiconductor Devices from Macro-Scale to Atomistic-Scale

Jialu Huang, Jingming Zhou, Zuoyuan Dong, Runsheng Wang, Junhao Chu, Xing Wu

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

As manufacturing processes for advanced semiconductor devices become more complex, precise defect localization and characterization are crucial for device failure analysis and reliability improvement. This review summarizes in situ defects localization methods across different scales. Specifically, it covers defect detection techniques from macroscopic level (such as EFA) to microscopic level (such as FIB-SEM and CR technique), even down to atomic level (typically TEM). Also, corresponding research findings are presented. These techniques provide significant support and assistance for developing advanced semiconductor devices.

Original languageEnglish
Title of host publication2024 IEEE 17th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2024
EditorsFan Ye, Xiaona Zhu, Ting Ao Tang
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9798350361834
DOIs
StatePublished - 2024
Event17th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2024 - Zhuhai, China
Duration: 22 Oct 202425 Oct 2024

Publication series

Name2024 IEEE 17th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2024

Conference

Conference17th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2024
Country/TerritoryChina
CityZhuhai
Period22/10/2425/10/24

Keywords

  • In situ defect localization
  • advanced semiconductor devices
  • infrared detector

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