Abstract
AgBiS2 nanorod arrays are grown directly on a substrate by a simple in situ preparation method in this work. TEM characterization shows that a single nanorod is 50 nm in diameter and 180 nm in length. Additionally, the nanostructured AgBiS2 film has a useful band gap (∼1.0 eV) with a very high absorption coefficient (105 cm-1). By applying these nanorods to photovoltaic devices, an efficiency of 1.4% is achieved. This simple preparation method provides a new route for the synthesis of nanostructured materials.
| Original language | English |
|---|---|
| Pages (from-to) | 3137-3141 |
| Number of pages | 5 |
| Journal | CrystEngComm |
| Volume | 21 |
| Issue number | 20 |
| DOIs | |
| State | Published - 2019 |
| Externally published | Yes |