In-situ atomic visualization of structural transformation in Hf0.5Zr0.5O2 ferroelectric thin film: From nonpolar tetragonal phase to polar orthorhombic phase

Yunzhe Zheng; Chaorong Zhong; Yonghui Zheng; Zhaomeng Gao; Yan Cheng; Qilan Zhong; Cheng Liu; Yiwei Wang; Ruijuan Qi; Rong Huang; Hangbing Lyu

In-situ atomic visualization of structural transformation in Hf_0.5Zr_0.5O₂ ferroelectric thin film: From nonpolar tetragonal phase to polar orthorhombic phase

Yunzhe Zheng
, Chaorong Zhong
, Yonghui Zheng
, Zhaomeng Gao
, Yan Cheng
, Qilan Zhong
, Cheng Liu
, Yiwei Wang
, Ruijuan Qi
, Rong Huang
, Hangbing Lyu

School of Physics and Electronic Science

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

34 Scopus citations

Abstract

For the first time, we directly visualized the dynamic process of phase transformation in polycrystalline ferroelectric (FE) Hf_0.5Zr_0.5O₂ (HZO) thin film though in-situ spherical aberration (Cs)-corrected transmission electron microscopy (TEM) technique. The main observations are: (1) the dynamic atomic scale structural evolution from centrosymmetric tetragonal (t-) phase to FE orthorhombic (o-) phase under electric field, and (2) the deformation of atomic arrangements in lattice caused by stress is helpful to make the transition happen. These observations provide solid evidence on understanding the fundamental mechanism of the root cause of ferroelectricity in fluorite-type FE materials.

Original language	English
Title of host publication	2021 Symposium on VLSI Technology, VLSI Technology 2021
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9784863487802
State	Published - 2021
Event	41st Symposium on VLSI Technology, VLSI Technology 2021 - Virtual, Online, Japan Duration: 13 Jun 2021 → 19 Jun 2021

Publication series

Name	Digest of Technical Papers - Symposium on VLSI Technology
Volume	2021-June
ISSN (Print)	0743-1562

Conference

Conference	41st Symposium on VLSI Technology, VLSI Technology 2021
Country/Territory	Japan
City	Virtual, Online
Period	13/06/21 → 19/06/21

Keywords

Ferroelectric
HZO film
In-situ TEM
Phase transition

Cite this

Zheng, Y., Zhong, C., Zheng, Y., Gao, Z., Cheng, Y., Zhong, Q., Liu, C., Wang, Y., Qi, R., Huang, R., & Lyu, H. (2021). In-situ atomic visualization of structural transformation in Hf_0.5Zr_0.5O₂ ferroelectric thin film: From nonpolar tetragonal phase to polar orthorhombic phase. In 2021 Symposium on VLSI Technology, VLSI Technology 2021 (Digest of Technical Papers - Symposium on VLSI Technology; Vol. 2021-June). Institute of Electrical and Electronics Engineers Inc..

Zheng, Yunzhe ; Zhong, Chaorong ; Zheng, Yonghui et al. / In-situ atomic visualization of structural transformation in Hf_0.5Zr_0.5O₂ ferroelectric thin film : From nonpolar tetragonal phase to polar orthorhombic phase. 2021 Symposium on VLSI Technology, VLSI Technology 2021. Institute of Electrical and Electronics Engineers Inc., 2021. (Digest of Technical Papers - Symposium on VLSI Technology).

@inproceedings{b5944f707bec4c55a182d75551611f8e,

title = "In-situ atomic visualization of structural transformation in Hf0.5Zr0.5O2 ferroelectric thin film: From nonpolar tetragonal phase to polar orthorhombic phase",

abstract = "For the first time, we directly visualized the dynamic process of phase transformation in polycrystalline ferroelectric (FE) Hf0.5Zr0.5O2 (HZO) thin film though in-situ spherical aberration (Cs)-corrected transmission electron microscopy (TEM) technique. The main observations are: (1) the dynamic atomic scale structural evolution from centrosymmetric tetragonal (t-) phase to FE orthorhombic (o-) phase under electric field, and (2) the deformation of atomic arrangements in lattice caused by stress is helpful to make the transition happen. These observations provide solid evidence on understanding the fundamental mechanism of the root cause of ferroelectricity in fluorite-type FE materials.",

keywords = "Ferroelectric, HZO film, In-situ TEM, Phase transition",

author = "Yunzhe Zheng and Chaorong Zhong and Yonghui Zheng and Zhaomeng Gao and Yan Cheng and Qilan Zhong and Cheng Liu and Yiwei Wang and Ruijuan Qi and Rong Huang and Hangbing Lyu",

note = "Publisher Copyright: {\textcopyright} 2021 JSAP; 41st Symposium on VLSI Technology, VLSI Technology 2021 ; Conference date: 13-06-2021 Through 19-06-2021",

year = "2021",

language = "英语",

series = "Digest of Technical Papers - Symposium on VLSI Technology",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2021 Symposium on VLSI Technology, VLSI Technology 2021",

address = "美国",

}

Zheng, Y, Zhong, C, Zheng, Y, Gao, Z, Cheng, Y, Zhong, Q, Liu, C, Wang, Y, Qi, R, Huang, R & Lyu, H 2021, In-situ atomic visualization of structural transformation in Hf_0.5Zr_0.5O₂ ferroelectric thin film: From nonpolar tetragonal phase to polar orthorhombic phase. in 2021 Symposium on VLSI Technology, VLSI Technology 2021. Digest of Technical Papers - Symposium on VLSI Technology, vol. 2021-June, Institute of Electrical and Electronics Engineers Inc., 41st Symposium on VLSI Technology, VLSI Technology 2021, Virtual, Online, Japan, 13/06/21.

In-situ atomic visualization of structural transformation in Hf_0.5Zr_0.5O₂ ferroelectric thin film: From nonpolar tetragonal phase to polar orthorhombic phase. / Zheng, Yunzhe; Zhong, Chaorong; Zheng, Yonghui et al.
2021 Symposium on VLSI Technology, VLSI Technology 2021. Institute of Electrical and Electronics Engineers Inc., 2021. (Digest of Technical Papers - Symposium on VLSI Technology; Vol. 2021-June).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - In-situ atomic visualization of structural transformation in Hf0.5Zr0.5O2 ferroelectric thin film

T2 - 41st Symposium on VLSI Technology, VLSI Technology 2021

AU - Zheng, Yunzhe

AU - Zhong, Chaorong

AU - Zheng, Yonghui

AU - Gao, Zhaomeng

AU - Cheng, Yan

AU - Zhong, Qilan

AU - Liu, Cheng

AU - Wang, Yiwei

AU - Qi, Ruijuan

AU - Huang, Rong

AU - Lyu, Hangbing

PY - 2021

Y1 - 2021

N2 - For the first time, we directly visualized the dynamic process of phase transformation in polycrystalline ferroelectric (FE) Hf0.5Zr0.5O2 (HZO) thin film though in-situ spherical aberration (Cs)-corrected transmission electron microscopy (TEM) technique. The main observations are: (1) the dynamic atomic scale structural evolution from centrosymmetric tetragonal (t-) phase to FE orthorhombic (o-) phase under electric field, and (2) the deformation of atomic arrangements in lattice caused by stress is helpful to make the transition happen. These observations provide solid evidence on understanding the fundamental mechanism of the root cause of ferroelectricity in fluorite-type FE materials.

AB - For the first time, we directly visualized the dynamic process of phase transformation in polycrystalline ferroelectric (FE) Hf0.5Zr0.5O2 (HZO) thin film though in-situ spherical aberration (Cs)-corrected transmission electron microscopy (TEM) technique. The main observations are: (1) the dynamic atomic scale structural evolution from centrosymmetric tetragonal (t-) phase to FE orthorhombic (o-) phase under electric field, and (2) the deformation of atomic arrangements in lattice caused by stress is helpful to make the transition happen. These observations provide solid evidence on understanding the fundamental mechanism of the root cause of ferroelectricity in fluorite-type FE materials.

KW - Ferroelectric

KW - HZO film

KW - In-situ TEM

KW - Phase transition

UR - https://www.scopus.com/pages/publications/85120159522

M3 - 会议稿件

AN - SCOPUS:85120159522

T3 - Digest of Technical Papers - Symposium on VLSI Technology

BT - 2021 Symposium on VLSI Technology, VLSI Technology 2021

PB - Institute of Electrical and Electronics Engineers Inc.

Y2 - 13 June 2021 through 19 June 2021

ER -

Zheng Y, Zhong C, Zheng Y, Gao Z, Cheng Y, Zhong Q et al. In-situ atomic visualization of structural transformation in Hf_0.5Zr_0.5O₂ ferroelectric thin film: From nonpolar tetragonal phase to polar orthorhombic phase. In 2021 Symposium on VLSI Technology, VLSI Technology 2021. Institute of Electrical and Electronics Engineers Inc. 2021. (Digest of Technical Papers - Symposium on VLSI Technology).