TY - JOUR
T1 - Improvement of rectifying property in Pt/TiOx/Pt by controlling oxidization of TiOx layer
AU - Zhong, Ni
AU - Shima, Hisashi
AU - Akinaga, Hiro
PY - 2011/4
Y1 - 2011/4
N2 - Rectifying Pt/TiOx/Pt capacitors have been prepared by depositing a single TiOx layer. An Ohmic contact is always found at TiOx/Pt (bottom electrode, BE), and is attributed to the formation of a dead layer at the beginning of the deposition process. The current-voltage (I-V) characteristic is governed by the transport characteristic of TiO x/Pt (top electrode, TE). The rectifying property is only found in Pt/TiOx/Pt with the TiOx layer when the O2 working flow is high during the deposition process. Besides a high O2 flow, a high working pressure is also required. Moreover, postannealing treatment can improve the rectifying property of the capacitors. Upon the optimization of the postannealing treatment process, the rectifying ratio at ±1:0 V increases from 20 to 4 × 103.
AB - Rectifying Pt/TiOx/Pt capacitors have been prepared by depositing a single TiOx layer. An Ohmic contact is always found at TiOx/Pt (bottom electrode, BE), and is attributed to the formation of a dead layer at the beginning of the deposition process. The current-voltage (I-V) characteristic is governed by the transport characteristic of TiO x/Pt (top electrode, TE). The rectifying property is only found in Pt/TiOx/Pt with the TiOx layer when the O2 working flow is high during the deposition process. Besides a high O2 flow, a high working pressure is also required. Moreover, postannealing treatment can improve the rectifying property of the capacitors. Upon the optimization of the postannealing treatment process, the rectifying ratio at ±1:0 V increases from 20 to 4 × 103.
UR - https://www.scopus.com/pages/publications/79955395381
U2 - 10.1143/JJAP.50.04DH04
DO - 10.1143/JJAP.50.04DH04
M3 - 文章
AN - SCOPUS:79955395381
SN - 0021-4922
VL - 50
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
IS - 4 PART 2
M1 - 04DH04
ER -